TY - GEN
T1 - Switching of a single atomic spin induced by spin injection
T2 - 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
AU - Kokado, S.
AU - Harigaya, K.
AU - Sakuma, A.
PY - 2009
Y1 - 2009
N2 - Toward the manipulation of a single atomic spin, we theoretically study the switching of a localized quantum spin S=(Sx, Sy, S z) induced by spin injection in electrode/S/electrode junctions. This S has a uniaxial anisotropy energy, - \D\S2z, which shows the bistable potential between Sz= - S and S, with D being an anisotropy constant. Furthermore, S interacts with the atomic vibration. For the initial state of Sz= - S, we consider a situation in which up-spin electrons exhibit the spinflip tunneling from the left electrode to the right one through an exchange interaction between the electron spin and S. Using the master equation approach, we investigate the time t dependence of the current I, the expectation value of Sz, 〈Sz〉, and that of the vibration quantum number, 〈n〉, of an S=2 system, which corresponds to an Fe atom on CuN surface. The systems exhibit the switching or nonswitching depending on the transition probability due to spin-atomic vibration interaction within a period of 10 ns. In addition, the t dependence of I and 〈n〉 is explained on the basis of 〈Sz〉 and the probability distribution.
AB - Toward the manipulation of a single atomic spin, we theoretically study the switching of a localized quantum spin S=(Sx, Sy, S z) induced by spin injection in electrode/S/electrode junctions. This S has a uniaxial anisotropy energy, - \D\S2z, which shows the bistable potential between Sz= - S and S, with D being an anisotropy constant. Furthermore, S interacts with the atomic vibration. For the initial state of Sz= - S, we consider a situation in which up-spin electrons exhibit the spinflip tunneling from the left electrode to the right one through an exchange interaction between the electron spin and S. Using the master equation approach, we investigate the time t dependence of the current I, the expectation value of Sz, 〈Sz〉, and that of the vibration quantum number, 〈n〉, of an S=2 system, which corresponds to an Fe atom on CuN surface. The systems exhibit the switching or nonswitching depending on the transition probability due to spin-atomic vibration interaction within a period of 10 ns. In addition, the t dependence of I and 〈n〉 is explained on the basis of 〈Sz〉 and the probability distribution.
KW - Atomic memory
KW - Single atomic spin
KW - Spin switching
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U2 - 10.1142/9789814282130_0031
DO - 10.1142/9789814282130_0031
M3 - Conference contribution
AN - SCOPUS:84903828620
SN - 981428212X
SN - 9789814282123
T3 - Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
SP - 142
EP - 145
BT - Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
PB - World Scientific Publishing Co. Pte Ltd
Y2 - 25 August 2008 through 28 August 2008
ER -