Switching field and thermal stability of CoPt/Ru dot arrays with various thicknesses

K. Mitsuzuka, N. Kikuchi, T. Shimatsu, O. Kitakami, H. Aoi, H. Muraoka, J. C. Lodder

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The switching fields and thermal stability of CoPt/Ru dot arrays with various dot thickness δ (5-20 nm) were experimentally investigated as a function of the dot diameter, D, (130-300 nm). All dot arrays showed a single domain state, even after removal of an applied field equal to the remanence coercivity Hr. The angular dependence of Hr for the dot arrays indicated coherent rotation of the magnetization during nucleation. We estimated the values of the "intrinsic" remanence coercivity H0 obtained by subtracting the effect of thermal agitation on the magnetization and the stabilizing energy barrier to nucleation E0/(kBT). The variation in H0 as a function of δ and D was qualitatively in good agreement with that of the effective anisotropy field at the dot center Hkeff(r = 0), calculated taking account of the demagnetizing field in the dots. The ratio of H0 to H keff(r = 0) for the dot arrays with δ = 10 nm increased from 0.53 to 0.70 as D decreased from 300 to 140 nm, and no significant difference in the H0/Hkeff(r = 0) ratio due to the difference in 6 was observed. On the other hand, E 0/(kBT) decreased as δ decreased. E 0/(kBT) increased slightly as D decreased, but, was not so sensitive to D over the present D range.

Original languageEnglish
Pages (from-to)2160-2162
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1

Keywords

  • CoPt perpendicular films
  • Dot arrays
  • Patterned media
  • Remanence coercivity
  • Single domain
  • Thermal stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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