Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun Chieh Lin, Tseung Yuen Tseng

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.

Original languageEnglish
Article number327
JournalNanoscale Research Letters
Volume13
DOIs
Publication statusPublished - 2018

Keywords

  • PMC
  • Programmable metallization devices
  • Resistive switching
  • Zinc peroxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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