Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Firman Mangasa Simanjuntak; Sridhar Chandrasekaran; Chun Chieh Lin; Tseung Yuen Tseng

doi:10.1186/s11671-018-2743-7

Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun Chieh Lin, Tseung Yuen Tseng

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO₂)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO₂ cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO₂ promotes the occurrence of switching behavior in Cu/ZnO₂/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO₂ is responsible for this degradation behavior and fine tuning on ZnO₂ properties, which is necessary to achieve proper switching characteristics in ZnO₂-based PMC devices.

Original language	English
Article number	327
Journal	Nanoscale Research Letters
Volume	13
DOIs	https://doi.org/10.1186/s11671-018-2743-7
Publication status	Published - 2018 Jan 1
Externally published	Yes

Keywords

PMC
Programmable metallization devices
Resistive switching
Zinc peroxide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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Simanjuntak, F. M., Chandrasekaran, S., Lin, C. C., & Tseng, T. Y. (2018). Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell. Nanoscale Research Letters, 13, [327]. https://doi.org/10.1186/s11671-018-2743-7

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abstract = "The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.",

keywords = "PMC, Programmable metallization devices, Resistive switching, Zinc peroxide",

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AU - Tseng, Tseung Yuen

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AB - The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.

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