TY - JOUR
T1 - Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
AU - Simanjuntak, Firman Mangasa
AU - Chandrasekaran, Sridhar
AU - Lin, Chun Chieh
AU - Tseng, Tseung Yuen
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, under project MOST 105-2811-E-259-002 and MOST 105-2221-E-259-027.
Funding Information:
The author would like to thank the support from the Ministry of Science and Technology (MOST), Taiwan.
Publisher Copyright:
© 2018, The Author(s).
PY - 2018
Y1 - 2018
N2 - The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.
AB - The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.
KW - PMC
KW - Programmable metallization devices
KW - Resistive switching
KW - Zinc peroxide
UR - http://www.scopus.com/inward/record.url?scp=85055165394&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85055165394&partnerID=8YFLogxK
U2 - 10.1186/s11671-018-2743-7
DO - 10.1186/s11671-018-2743-7
M3 - Article
AN - SCOPUS:85055165394
VL - 13
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
SN - 1931-7573
M1 - 327
ER -