We succeeded in measuring the switching-current distribution, P(I), for the first switch from the zero-voltage state, where only two or three resistive states are included, in the intrinsic Josephson junctions (IJJs) of underdoped La2-xSrxCuO4. We found that the behavior of P(I) below 5 K was very similar to the recent results on IJJs of Bi 2Sr2CaCu2Oy. We discuss the origin of this behavior in terms of the interlayer coupling effects as well as macroscopic quantum tunneling.
- Intrinsic Josephson junction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering