Swelling and recovery behavior in silicon carbide irradiated at high temperature

Sosuke Kondo, Yutai Katoh, Hirotatsu Kishimoto, Tatsuya Hinoki, Akira Kohyama

Research output: Contribution to conferencePaper

Abstract

Swelling and microstructural evolution in chemically vapor-deposited β-SiC irradiated at high temperature were studied. The 5.1 MeV Si 2+-ion irradiation was carried out by DuET facility, Kyoto University. The swelling value of specimen irradiated at 1873 K was 0.23 %. It shows the tendency for swelling to decrease with increasing irradiation temperature, comparing previous ion-irradiation data. No voids were detected by TEM. Recovery behavior of swelling in β-SiC irradiated at 1073 K was studied by post-irradiation annealing in vacuum up to 1473 K. Approximately linear decrease in swelling value started at around irradiation temperature. At annealing temperature of 1273 K, the swelling (0.23 %) reduced to one third of as-irradiated specimen. From microstructural observations, the recovery of swelling may attributed to the decrease in the number density of small irradiation-induced defects (black spots below d = 4 nm in most cases).

Original languageEnglish
Pages2782-2787
Number of pages6
Publication statusPublished - 2005 Dec 1
Externally publishedYes
EventAmerican Nuclear Society - International Congress on Advances in Nuclear Power Plants 2005, ICAPP'05 - Seoul, Korea, Republic of
Duration: 2005 May 152005 May 19

Other

OtherAmerican Nuclear Society - International Congress on Advances in Nuclear Power Plants 2005, ICAPP'05
CountryKorea, Republic of
CitySeoul
Period05/5/1505/5/19

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Safety, Risk, Reliability and Quality

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    Kondo, S., Katoh, Y., Kishimoto, H., Hinoki, T., & Kohyama, A. (2005). Swelling and recovery behavior in silicon carbide irradiated at high temperature. 2782-2787. Paper presented at American Nuclear Society - International Congress on Advances in Nuclear Power Plants 2005, ICAPP'05, Seoul, Korea, Republic of.