Swelling and recovery behavior in silicon carbide irradiated at high temperature

Sosuke Kondo; Yutai Katoh; Hirotatsu Kishimoto; Tatsuya Hinoki; Akira Kohyama

Swelling and recovery behavior in silicon carbide irradiated at high temperature

Sosuke Kondo, Yutai Katoh, Hirotatsu Kishimoto, Tatsuya Hinoki, Akira Kohyama

Research output: Contribution to conference › Paper › peer-review

Abstract

Swelling and microstructural evolution in chemically vapor-deposited β-SiC irradiated at high temperature were studied. The 5.1 MeV Si ²⁺-ion irradiation was carried out by DuET facility, Kyoto University. The swelling value of specimen irradiated at 1873 K was 0.23 %. It shows the tendency for swelling to decrease with increasing irradiation temperature, comparing previous ion-irradiation data. No voids were detected by TEM. Recovery behavior of swelling in β-SiC irradiated at 1073 K was studied by post-irradiation annealing in vacuum up to 1473 K. Approximately linear decrease in swelling value started at around irradiation temperature. At annealing temperature of 1273 K, the swelling (0.23 %) reduced to one third of as-irradiated specimen. From microstructural observations, the recovery of swelling may attributed to the decrease in the number density of small irradiation-induced defects (black spots below d = 4 nm in most cases).

Original language	English
Pages	2782-2787
Number of pages	6
Publication status	Published - 2005 Dec 1
Externally published	Yes
Event	American Nuclear Society - International Congress on Advances in Nuclear Power Plants 2005, ICAPP'05 - Seoul, Korea, Republic of Duration: 2005 May 15 → 2005 May 19

Other

Other	American Nuclear Society - International Congress on Advances in Nuclear Power Plants 2005, ICAPP'05
Country	Korea, Republic of
City	Seoul
Period	05/5/15 → 05/5/19

ASJC Scopus subject areas

Nuclear Energy and Engineering
Safety, Risk, Reliability and Quality

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Swelling and recovery behavior in silicon carbide irradiated at high temperature. / Kondo, Sosuke; Katoh, Yutai; Kishimoto, Hirotatsu; Hinoki, Tatsuya; Kohyama, Akira.

2005. 2782-2787 Paper presented at American Nuclear Society - International Congress on Advances in Nuclear Power Plants 2005, ICAPP'05, Seoul, Korea, Republic of.

Research output: Contribution to conference › Paper › peer-review

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title = "Swelling and recovery behavior in silicon carbide irradiated at high temperature",

abstract = "Swelling and microstructural evolution in chemically vapor-deposited β-SiC irradiated at high temperature were studied. The 5.1 MeV Si 2+-ion irradiation was carried out by DuET facility, Kyoto University. The swelling value of specimen irradiated at 1873 K was 0.23 %. It shows the tendency for swelling to decrease with increasing irradiation temperature, comparing previous ion-irradiation data. No voids were detected by TEM. Recovery behavior of swelling in β-SiC irradiated at 1073 K was studied by post-irradiation annealing in vacuum up to 1473 K. Approximately linear decrease in swelling value started at around irradiation temperature. At annealing temperature of 1273 K, the swelling (0.23 %) reduced to one third of as-irradiated specimen. From microstructural observations, the recovery of swelling may attributed to the decrease in the number density of small irradiation-induced defects (black spots below d = 4 nm in most cases).",

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T1 - Swelling and recovery behavior in silicon carbide irradiated at high temperature

AU - Kondo, Sosuke

AU - Katoh, Yutai

AU - Kishimoto, Hirotatsu

AU - Hinoki, Tatsuya

AU - Kohyama, Akira

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Swelling and microstructural evolution in chemically vapor-deposited β-SiC irradiated at high temperature were studied. The 5.1 MeV Si 2+-ion irradiation was carried out by DuET facility, Kyoto University. The swelling value of specimen irradiated at 1873 K was 0.23 %. It shows the tendency for swelling to decrease with increasing irradiation temperature, comparing previous ion-irradiation data. No voids were detected by TEM. Recovery behavior of swelling in β-SiC irradiated at 1073 K was studied by post-irradiation annealing in vacuum up to 1473 K. Approximately linear decrease in swelling value started at around irradiation temperature. At annealing temperature of 1273 K, the swelling (0.23 %) reduced to one third of as-irradiated specimen. From microstructural observations, the recovery of swelling may attributed to the decrease in the number density of small irradiation-induced defects (black spots below d = 4 nm in most cases).

AB - Swelling and microstructural evolution in chemically vapor-deposited β-SiC irradiated at high temperature were studied. The 5.1 MeV Si 2+-ion irradiation was carried out by DuET facility, Kyoto University. The swelling value of specimen irradiated at 1873 K was 0.23 %. It shows the tendency for swelling to decrease with increasing irradiation temperature, comparing previous ion-irradiation data. No voids were detected by TEM. Recovery behavior of swelling in β-SiC irradiated at 1073 K was studied by post-irradiation annealing in vacuum up to 1473 K. Approximately linear decrease in swelling value started at around irradiation temperature. At annealing temperature of 1273 K, the swelling (0.23 %) reduced to one third of as-irradiated specimen. From microstructural observations, the recovery of swelling may attributed to the decrease in the number density of small irradiation-induced defects (black spots below d = 4 nm in most cases).

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