Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy

P. Pal; K. Sato; H. Hida; M. A. Gosalvez; Y. Kimura; K. Ishibashi; M. Niwano

doi:10.1109/SENSOR.2009.5285602

Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy

P. Pal, K. Sato, H. Hida, M. A. Gosalvez, Y. Kimura, K. Ishibashi, M. Niwano

Human Information Systems Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We have demonstrated the applications of surfactant added TMAH for the formation of new shapes of MEMS components. The research is further extended for in-situ observation of the Si/(TMAH+surfactant) interface during the etching process using Fourier Transform Infrared Microscopy (FT-IR) in the multiple internal reflection (MIR) geometry to detect the selective adsorption of the surfactant on different crystallographic planes. The study is primarily aimed at investigating the causes behind the change in the etching behavior of TMAH solution when the surfactant is added. Silicon wafers with different orientation are used to observe the selective adsorption of the surfactant on their surfaces.

Original language	English
Title of host publication	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages	751-754
Number of pages	4
DOIs	https://doi.org/10.1109/SENSOR.2009.5285602
Publication status	Published - 2009 Dec 11
Event	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States Duration: 2009 Jun 21 → 2009 Jun 25

Publication series

Name	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country	United States
City	Denver, CO
Period	09/6/21 → 09/6/25

Keywords

Anisotropic etching
FT-IR spectroscopy
Infrared
Silicon
Surfactant
TMAH

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SENSOR.2009.5285602

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Pal, P., Sato, K., Hida, H., Gosalvez, M. A., Kimura, Y., Ishibashi, K., & Niwano, M. (2009). Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 751-754). [5285602] (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285602

Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy. / Pal, P.; Sato, K.; Hida, H.; Gosalvez, M. A.; Kimura, Y.; Ishibashi, K.; Niwano, M.

TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 751-754 5285602 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pal, P, Sato, K, Hida, H, Gosalvez, MA, Kimura, Y, Ishibashi, K & Niwano, M 2009, Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy. in TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems., 5285602, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, pp. 751-754, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Denver, CO, United States, 09/6/21. https://doi.org/10.1109/SENSOR.2009.5285602

Pal P, Sato K, Hida H, Gosalvez MA, Kimura Y, Ishibashi K et al. Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 751-754. 5285602. (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285602

Pal, P. ; Sato, K. ; Hida, H. ; Gosalvez, M. A. ; Kimura, Y. ; Ishibashi, K. ; Niwano, M. / Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy. TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. pp. 751-754 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems).

@inproceedings{215444f41e234da78370d966e3d01297,

title = "Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy",

abstract = "We have demonstrated the applications of surfactant added TMAH for the formation of new shapes of MEMS components. The research is further extended for in-situ observation of the Si/(TMAH+surfactant) interface during the etching process using Fourier Transform Infrared Microscopy (FT-IR) in the multiple internal reflection (MIR) geometry to detect the selective adsorption of the surfactant on different crystallographic planes. The study is primarily aimed at investigating the causes behind the change in the etching behavior of TMAH solution when the surfactant is added. Silicon wafers with different orientation are used to observe the selective adsorption of the surfactant on their surfaces.",

keywords = "Anisotropic etching, FT-IR spectroscopy, Infrared, Silicon, Surfactant, TMAH",

author = "P. Pal and K. Sato and H. Hida and Gosalvez, {M. A.} and Y. Kimura and K. Ishibashi and M. Niwano",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/SENSOR.2009.5285602",

language = "English",

isbn = "9781424441938",

series = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

pages = "751--754",

booktitle = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

note = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems ; Conference date: 21-06-2009 Through 25-06-2009",

}

TY - GEN

T1 - Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy

AU - Pal, P.

AU - Sato, K.

AU - Hida, H.

AU - Gosalvez, M. A.

AU - Kimura, Y.

AU - Ishibashi, K.

AU - Niwano, M.

PY - 2009/12/11

Y1 - 2009/12/11

N2 - We have demonstrated the applications of surfactant added TMAH for the formation of new shapes of MEMS components. The research is further extended for in-situ observation of the Si/(TMAH+surfactant) interface during the etching process using Fourier Transform Infrared Microscopy (FT-IR) in the multiple internal reflection (MIR) geometry to detect the selective adsorption of the surfactant on different crystallographic planes. The study is primarily aimed at investigating the causes behind the change in the etching behavior of TMAH solution when the surfactant is added. Silicon wafers with different orientation are used to observe the selective adsorption of the surfactant on their surfaces.

AB - We have demonstrated the applications of surfactant added TMAH for the formation of new shapes of MEMS components. The research is further extended for in-situ observation of the Si/(TMAH+surfactant) interface during the etching process using Fourier Transform Infrared Microscopy (FT-IR) in the multiple internal reflection (MIR) geometry to detect the selective adsorption of the surfactant on different crystallographic planes. The study is primarily aimed at investigating the causes behind the change in the etching behavior of TMAH solution when the surfactant is added. Silicon wafers with different orientation are used to observe the selective adsorption of the surfactant on their surfaces.

KW - Anisotropic etching

KW - FT-IR spectroscopy

KW - Infrared

KW - Silicon

KW - Surfactant

KW - TMAH

UR - http://www.scopus.com/inward/record.url?scp=71449097971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71449097971&partnerID=8YFLogxK

U2 - 10.1109/SENSOR.2009.5285602

DO - 10.1109/SENSOR.2009.5285602

M3 - Conference contribution

AN - SCOPUS:71449097971

SN - 9781424441938

T3 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

SP - 751

EP - 754

BT - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

T2 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Y2 - 21 June 2009 through 25 June 2009

ER -