Surfactant in TMAH for new shapes of silicon MEMS components; its orientation dependent adsorption detected by infrared spectroscopy

P. Pal, K. Sato, H. Hida, M. A. Gosalvez, Y. Kimura, K. Ishibashi, M. Niwano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have demonstrated the applications of surfactant added TMAH for the formation of new shapes of MEMS components. The research is further extended for in-situ observation of the Si/(TMAH+surfactant) interface during the etching process using Fourier Transform Infrared Microscopy (FT-IR) in the multiple internal reflection (MIR) geometry to detect the selective adsorption of the surfactant on different crystallographic planes. The study is primarily aimed at investigating the causes behind the change in the etching behavior of TMAH solution when the surfactant is added. Silicon wafers with different orientation are used to observe the selective adsorption of the surfactant on their surfaces.

Original languageEnglish
Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages751-754
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 11
EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
Duration: 2009 Jun 212009 Jun 25

Publication series

NameTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
CountryUnited States
CityDenver, CO
Period09/6/2109/6/25

Keywords

  • Anisotropic etching
  • FT-IR spectroscopy
  • Infrared
  • Silicon
  • Surfactant
  • TMAH

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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