Surfactant effect of Mn on the formation of self-organized InAs nanostructures

S. P. Guo; A. Shen; H. Yasuda; Y. Ohno; F. Matsukura; H. Ohno

doi:10.1016/S0022-0248(99)00465-0

Surfactant effect of Mn on the formation of self-organized InAs nanostructures

S. P. Guo, A. Shen, H. Yasuda, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML₂₁₁ (6 monolayers in (211) plane) of InAs was grown on GaAs (211)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 °C. With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 °C, whereas only QDs resulted at 380 °C. Nanostructures on (100) and (311)B surfaces were also investigated and compared.

Original language	English
Pages (from-to)	799-803
Number of pages	5
Journal	Journal of Crystal Growth
Volume	208
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(99)00465-0
Publication status	Published - 2000 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(99)00465-0

Fingerprint Dive into the research topics of 'Surfactant effect of Mn on the formation of self-organized InAs nanostructures'. Together they form a unique fingerprint.

Cite this

@article{298d529c7bc84efaa25e7e10874adb8e,

title = "Surfactant effect of Mn on the formation of self-organized InAs nanostructures",

abstract = "The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML211 (6 monolayers in (211) plane) of InAs was grown on GaAs (211)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 °C. With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 °C, whereas only QDs resulted at 380 °C. Nanostructures on (100) and (311)B surfaces were also investigated and compared.",

author = "Guo, {S. P.} and A. Shen and H. Yasuda and Y. Ohno and F. Matsukura and H. Ohno",

note = "Funding Information: This work was partly supported by the “Research for the Future” Program from the Japan Society for the Promotion of Science (JSPS-RFTF97P00202) and by a Grant-in-Aid for Scientific Research on Priority Area (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan.",

year = "2000",

month = jan,

day = "1",

doi = "10.1016/S0022-0248(99)00465-0",

language = "English",

volume = "208",

pages = "799--803",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Surfactant effect of Mn on the formation of self-organized InAs nanostructures

AU - Guo, S. P.

AU - Shen, A.

AU - Yasuda, H.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was partly supported by the “Research for the Future” Program from the Japan Society for the Promotion of Science (JSPS-RFTF97P00202) and by a Grant-in-Aid for Scientific Research on Priority Area (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML211 (6 monolayers in (211) plane) of InAs was grown on GaAs (211)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 °C. With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 °C, whereas only QDs resulted at 380 °C. Nanostructures on (100) and (311)B surfaces were also investigated and compared.

AB - The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML211 (6 monolayers in (211) plane) of InAs was grown on GaAs (211)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 °C. With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 °C, whereas only QDs resulted at 380 °C. Nanostructures on (100) and (311)B surfaces were also investigated and compared.

UR - http://www.scopus.com/inward/record.url?scp=0033905782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033905782&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(99)00465-0

DO - 10.1016/S0022-0248(99)00465-0

M3 - Article

AN - SCOPUS:0033905782

VL - 208

SP - 799

EP - 803

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -