Surfactant effect of Mn on the formation of self-organized InAs nanostructures

S. P. Guo, A. Shen, H. Yasuda, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML211 (6 monolayers in (211) plane) of InAs was grown on GaAs (211)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 °C. With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 °C, whereas only QDs resulted at 380 °C. Nanostructures on (100) and (311)B surfaces were also investigated and compared.

Original languageEnglish
Pages (from-to)799-803
Number of pages5
JournalJournal of Crystal Growth
Volume208
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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