TY - JOUR
T1 - Surfactant effect of Mn on the formation of self-organized InAs nanostructures
AU - Guo, S. P.
AU - Shen, A.
AU - Yasuda, H.
AU - Ohno, Y.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by the “Research for the Future” Program from the Japan Society for the Promotion of Science (JSPS-RFTF97P00202) and by a Grant-in-Aid for Scientific Research on Priority Area (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML211 (6 monolayers in (211) plane) of InAs was grown on GaAs (211)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 °C. With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 °C, whereas only QDs resulted at 380 °C. Nanostructures on (100) and (311)B surfaces were also investigated and compared.
AB - The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML211 (6 monolayers in (211) plane) of InAs was grown on GaAs (211)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 °C. With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 °C, whereas only QDs resulted at 380 °C. Nanostructures on (100) and (311)B surfaces were also investigated and compared.
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U2 - 10.1016/S0022-0248(99)00465-0
DO - 10.1016/S0022-0248(99)00465-0
M3 - Article
AN - SCOPUS:0033905782
VL - 208
SP - 799
EP - 803
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -