Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam

Yuden Teraoka, Muneaki Jinno, Tsuyoshi Takaoka, James Robert Harries, Ryuta Okada, Yutaro Iwai, Akitaka Yoshigoe, Tadahiro Komeda

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.

Original languageEnglish
Pages (from-to)524-525
Number of pages2
JournalIEEJ Transactions on Electronics, Information and Systems
Volume134
Issue number4
DOIs
Publication statusPublished - 2014

Keywords

  • Aluminum nitride
  • Nitride layer
  • Photoemission spectroscopy
  • Supersonic molecular beam
  • Synchrotron radiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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