TY - JOUR
T1 - Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam
AU - Teraoka, Yuden
AU - Jinno, Muneaki
AU - Takaoka, Tsuyoshi
AU - Harries, James Robert
AU - Okada, Ryuta
AU - Iwai, Yutaro
AU - Yoshigoe, Akitaka
AU - Komeda, Tadahiro
PY - 2014
Y1 - 2014
N2 - Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.
AB - Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.
KW - Aluminum nitride
KW - Nitride layer
KW - Photoemission spectroscopy
KW - Supersonic molecular beam
KW - Synchrotron radiation
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U2 - 10.1541/ieejeiss.134.524
DO - 10.1541/ieejeiss.134.524
M3 - Article
AN - SCOPUS:84897980079
VL - 134
SP - 524
EP - 525
JO - IEEJ Transactions on Electronics, Information and Systems
JF - IEEJ Transactions on Electronics, Information and Systems
SN - 0385-4221
IS - 4
ER -