Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam

Yuden Teraoka; Muneaki Jinno; Tsuyoshi Takaoka; James Robert Harries; Ryuta Okada; Yutaro Iwai; Akitaka Yoshigoe; Tadahiro Komeda

doi:10.1541/ieejeiss.134.524

Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam

Yuden Teraoka, Muneaki Jinno, Tsuyoshi Takaoka, James Robert Harries, Ryuta Okada, Yutaro Iwai, Akitaka Yoshigoe, Tadahiro Komeda

Center for Advanced Microscopy and Spectroscopy

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.

Original language	English
Pages (from-to)	524-525
Number of pages	2
Journal	IEEJ Transactions on Electronics, Information and Systems
Volume	134
Issue number	4
DOIs	https://doi.org/10.1541/ieejeiss.134.524
Publication status	Published - 2014

Keywords

Aluminum nitride
Nitride layer
Photoemission spectroscopy
Supersonic molecular beam
Synchrotron radiation

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1541/ieejeiss.134.524

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Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam. / Teraoka, Yuden; Jinno, Muneaki; Takaoka, Tsuyoshi; Harries, James Robert; Okada, Ryuta; Iwai, Yutaro; Yoshigoe, Akitaka; Komeda, Tadahiro.

In: IEEJ Transactions on Electronics, Information and Systems, Vol. 134, No. 4, 2014, p. 524-525.

Research output: Contribution to journal › Article › peer-review

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title = "Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam",

abstract = "Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.",

keywords = "Aluminum nitride, Nitride layer, Photoemission spectroscopy, Supersonic molecular beam, Synchrotron radiation",

author = "Yuden Teraoka and Muneaki Jinno and Tsuyoshi Takaoka and Harries, {James Robert} and Ryuta Okada and Yutaro Iwai and Akitaka Yoshigoe and Tadahiro Komeda",

year = "2014",

doi = "10.1541/ieejeiss.134.524",

language = "English",

volume = "134",

pages = "524--525",

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T1 - Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam

AU - Teraoka, Yuden

AU - Jinno, Muneaki

AU - Takaoka, Tsuyoshi

AU - Harries, James Robert

AU - Okada, Ryuta

AU - Iwai, Yutaro

AU - Yoshigoe, Akitaka

AU - Komeda, Tadahiro

PY - 2014

Y1 - 2014

N2 - Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.

AB - Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.

KW - Aluminum nitride

KW - Nitride layer

KW - Photoemission spectroscopy

KW - Supersonic molecular beam

KW - Synchrotron radiation

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JO - IEEJ Transactions on Electronics, Information and Systems

JF - IEEJ Transactions on Electronics, Information and Systems

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Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam

Abstract

Keywords

ASJC Scopus subject areas

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