Abstract
Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.
| Original language | English |
|---|---|
| Pages (from-to) | 524-525 |
| Number of pages | 2 |
| Journal | IEEJ Transactions on Electronics, Information and Systems |
| Volume | 134 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2014 |
Keywords
- Aluminum nitride
- Nitride layer
- Photoemission spectroscopy
- Supersonic molecular beam
- Synchrotron radiation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Teraoka, Y., Jinno, M., Takaoka, T., Harries, J. R., Okada, R., Iwai, Y., Yoshigoe, A., & Komeda, T. (2014). Surface temperature dependence on AlN film formation processes induced by supersonic N2 molecular beam. IEEJ Transactions on Electronics, Information and Systems, 134(4), 524-525. https://doi.org/10.1541/ieejeiss.134.524