Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

Q. K. Xue, Q. Z. Xue, S. Kuwano, K. Nakayama, T. Sakurai, I. S.T. Tsong, X. G. Qiu, Y. Segawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We report on the surface reconstructions on the basal planes of wurtzite GaN. Depending on the surface polarity, two distinct classes of reconstructions form. The Ga-polar surface displays the Ga fluid-1 ×1, 10 × 10, 5,√3 × 2√13, 5 × 5, 4 × 4, and 2 × 2, and the (0 0 0 1) N-polar surface the 6 × 8, 6 × 6, √7 × √7 and 2 × 3 with decreasing surface Ga coverage. We will show that their structure is consistent with a simple Ga-adatom-based scheme. Crystalline structure and optical properties of the GaN epilayers are examined by high resolution X-ray diffraction and photoluminescence, and the results reveal a strong relation between the threading-dislocation density and the intensities of both near-band transition at 3.427eV and yellow luminescence at 2.16eV.

Original languageEnglish
Pages (from-to)41-47
Number of pages7
JournalJournal of Crystal Growth
Volume229
Issue number1
DOIs
Publication statusPublished - 2001 Jul 2
Externally publishedYes

Keywords

  • A1. High resolution X-ray diffraction
  • A1. Surface structure
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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