Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

Q. K. Xue, Q. Z. Xue, S. Kuwano, K. Nakayama, T. Sakurai, I. S.T. Tsong, X. G. Qiu, Y. Segawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We report on the surface reconstructions on the basal planes of wurtzite GaN. Depending on the surface polarity, two distinct classes of reconstructions form. The Ga-polar surface displays the Ga fluid-1 ×1, 10 × 10, 5,√3 × 2√13, 5 × 5, 4 × 4, and 2 × 2, and the (0 0 0 1) N-polar surface the 6 × 8, 6 × 6, √7 × √7 and 2 × 3 with decreasing surface Ga coverage. We will show that their structure is consistent with a simple Ga-adatom-based scheme. Crystalline structure and optical properties of the GaN epilayers are examined by high resolution X-ray diffraction and photoluminescence, and the results reveal a strong relation between the threading-dislocation density and the intensities of both near-band transition at 3.427eV and yellow luminescence at 2.16eV.

Original languageEnglish
Pages (from-to)41-47
Number of pages7
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2001 Jul 2
Externally publishedYes


  • A1. High resolution X-ray diffraction
  • A1. Surface structure
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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