TY - JOUR
T1 - Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC
AU - Xue, Q. K.
AU - Xue, Q. Z.
AU - Kuwano, S.
AU - Nakayama, K.
AU - Sakurai, T.
AU - Tsong, I. S.T.
AU - Qiu, X. G.
AU - Segawa, Y.
N1 - Funding Information:
The support by Department of Education of Japan is greatly appreciated [Special Priority Project 11301-08102001]. QKX acknowledges the support of the China National Science Foundation (Outstanding Youth Funds 69625608).
PY - 2001/7/2
Y1 - 2001/7/2
N2 - We report on the surface reconstructions on the basal planes of wurtzite GaN. Depending on the surface polarity, two distinct classes of reconstructions form. The Ga-polar surface displays the Ga fluid-1 ×1, 10 × 10, 5,√3 × 2√13, 5 × 5, 4 × 4, and 2 × 2, and the (0 0 0 1) N-polar surface the 6 × 8, 6 × 6, √7 × √7 and 2 × 3 with decreasing surface Ga coverage. We will show that their structure is consistent with a simple Ga-adatom-based scheme. Crystalline structure and optical properties of the GaN epilayers are examined by high resolution X-ray diffraction and photoluminescence, and the results reveal a strong relation between the threading-dislocation density and the intensities of both near-band transition at 3.427eV and yellow luminescence at 2.16eV.
AB - We report on the surface reconstructions on the basal planes of wurtzite GaN. Depending on the surface polarity, two distinct classes of reconstructions form. The Ga-polar surface displays the Ga fluid-1 ×1, 10 × 10, 5,√3 × 2√13, 5 × 5, 4 × 4, and 2 × 2, and the (0 0 0 1) N-polar surface the 6 × 8, 6 × 6, √7 × √7 and 2 × 3 with decreasing surface Ga coverage. We will show that their structure is consistent with a simple Ga-adatom-based scheme. Crystalline structure and optical properties of the GaN epilayers are examined by high resolution X-ray diffraction and photoluminescence, and the results reveal a strong relation between the threading-dislocation density and the intensities of both near-band transition at 3.427eV and yellow luminescence at 2.16eV.
KW - A1. High resolution X-ray diffraction
KW - A1. Surface structure
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/S0022-0248(01)01048-X
DO - 10.1016/S0022-0248(01)01048-X
M3 - Article
AN - SCOPUS:0035399113
VL - 229
SP - 41
EP - 47
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -