Surface structures of GaAs{111}A,B-(2 × 2)

A. Ohtake, J. Nakamura, T. Komura, Takashi Hanada, T. Yao, H. Kuramochi, M. Ozeki

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

Atomic structures of the GaAs{111}A,B-(2 × 2) surfaces have been studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and first-principles total-energy calculations. STM observations have revealed that the GaAs(111)A-(2 × 2) surface exhibits large ordered regions having the Ga-vacancy buckling structure, while the GaAs(111)B-(2 × 2) surface consists of small domains, where the As trimers are adsorbed on the outermost As layer. The atomic coordinates for both surface structures have been determined by a rocking-curve analysis using RHEED. The obtained structure parameters are in good agreement with those obtained from first-principles calculations.

Original languageEnglish
Article number045318
Pages (from-to)453181-453188
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number4
Publication statusPublished - 2001 Jul 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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