Surface structures of GaAs passivated by chalcogen atoms

Hidemi Shigekawa, Haruhiro Oigawa, Koji Miyake, Yoshiaki Aiso, Yasuo Nannichi, Yoshio Saito, Tomihiro Hashizume, Toshio Sakurai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


When a GaAs(001) surface with Se adsorbates was flash-heated under a low chemical potential condition, a 2 × 3 RHEED pattern, previously reported as an intermediate structure, remained even after the sample was cooled. The atomic structure observed by STM is in good agreement with the dimer model proposed to explain the chalcogen-passivated GaAs(001) surfaces. Se dimers were found to be buckled, but the 2 × -periodicity was maintained in the [110] direction, unlike the previously observed 4 × -structure forming the dimer row pairs. Some other structures, the axes of which are in directions different from [110], were also observed on the Se/GaAs(001) surface. The S-passivation effect was studied by measuring current-voltage properties for the S/GaAs(001) surface.

Original languageEnglish
Pages (from-to)169-174
Number of pages6
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 1994 Jan 2
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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