Surface structure of selenium-treated GaAs (001) studied by field ion scanning tunneling microscopy

H. Shigekawa, T. Hashizume, H. Oigawa, K. Motai, Y. Mera, Y. Nannichi, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    For a selenium-treated GaAs (001) surface followed by heat treatment at ∼530°C, we have observed using field ion scanning tunneling microscopy ordered arrays with regular intervals of 4×periodicity in the [1̄10] direction (1.6 nm) to line up in the [110] direction. These ordered arrays are in good agreement with the 4×1 structure previously observed by other methods. In a closer view, the 4×structure was found to be formed by closely placed double rows.

    Original languageEnglish
    Pages (from-to)2986-2988
    Number of pages3
    JournalApplied Physics Letters
    Volume59
    Issue number23
    DOIs
    Publication statusPublished - 1991

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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