Surface structure of 3C-SiC(111) fabricated by C60 precursor: A scanning tunneling microscopy and high-resolution electron energy loss spectroscopy study

C. W. Hu, A. Kasuya, Shozo Suto, A. Wawro, Y. Nishina

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7 Citations (Scopus)

Abstract

The surface composition and structure of the 3C-SiC(111) surface prepared by thermal reaction of C60 molecules with the Si(111) substrate are investigated with scanning tunneling microscopy and high-resolution electron energy loss spectroscopy. Three distinct surface reconstructions are observed by STM on the SiC(111) surfaces as the reaction temperature varied from 800 to 1200°C. The (2×2) and (2×3) reconstructions observed under low reaction temperature (<900 °C) are considered to be a C cluster-covered surface. The (3×3) structure yielded at the elevated temperature (1100 °C) is believed to be the Si-terminated 3C-SiC(111) surface. A transient (4×3) structure shows up at around 1000 °C during the annealing processing. The surface composition and reconstruction are further confirmed through the optical Fuchs-Kliewer surface phonon measured in situ by high-resolution energy loss spectroscopy. The diffusivity of Si atoms through SiC film at various temperatures is suggested as the main reason for the formation of different surface reconstructions.

Original languageEnglish
Pages (from-to)938-942
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number2
Publication statusPublished - 1996 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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