Abstract
Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.
Original language | English |
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Pages (from-to) | 241-244 |
Number of pages | 4 |
Journal | Surface Science |
Volume | 267 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1992 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry