Surface structure dependence of GaAs microcrystals size grown by As-incorporation into Ga droplets

Toyohiro Chikyow, Satoshi Takahashi, Nobuyuki Koguchi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.

Original languageEnglish
Pages (from-to)241-244
Number of pages4
JournalSurface Science
Volume267
Issue number1-3
DOIs
Publication statusPublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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