Abstract
Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.
| Original language | English |
|---|---|
| Pages (from-to) | 241-244 |
| Number of pages | 4 |
| Journal | Surface Science |
| Volume | 267 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 1992 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Chikyow, T., Takahashi, S., & Koguchi, N. (1992). Surface structure dependence of GaAs microcrystals size grown by As-incorporation into Ga droplets. Surface Science, 267(1-3), 241-244. https://doi.org/10.1016/0039-6028(92)91129-Y