Surface structure dependence of GaAs microcrystals size grown by As-incorporation into Ga droplets

Toyohiro Chikyow; Satoshi Takahashi; Nobuyuki Koguchi

doi:10.1016/0039-6028(92)91129-Y

Surface structure dependence of GaAs microcrystals size grown by As-incorporation into Ga droplets

Toyohiro Chikyow, Satoshi Takahashi, Nobuyuki Koguchi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.

Original language	English
Pages (from-to)	241-244
Number of pages	4
Journal	Surface Science
Volume	267
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(92)91129-Y
Publication status	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(92)91129-Y

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title = "Surface structure dependence of GaAs microcrystals size grown by As-incorporation into Ga droplets",

abstract = "Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.",

author = "Toyohiro Chikyow and Satoshi Takahashi and Nobuyuki Koguchi",

year = "1992",

doi = "10.1016/0039-6028(92)91129-Y",

language = "English",

volume = "267",

pages = "241--244",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

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T1 - Surface structure dependence of GaAs microcrystals size grown by As-incorporation into Ga droplets

AU - Chikyow, Toyohiro

AU - Takahashi, Satoshi

AU - Koguchi, Nobuyuki

PY - 1992

Y1 - 1992

N2 - Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.

AB - Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.

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EP - 244

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