Surface stress in thin oxide layer made by plasma oxidation with applying positive bias

A. N. Itakura, T. Narushima, M. Kitajima, K. Teraishi, A. Yamada, A. Miyamoto

Research output: Contribution to journalConference articlepeer-review

21 Citations (Scopus)

Abstract

The time evolution of the surface stress during plasma oxidation of Si(100) at a very early stage (oxide thickness <5 nm) has been studied, using a Si micromechanical cantilever. The effect of positive bias voltage applied to samples was examined. Three different stages of stress evolution are observed during the first 1000 s. The initial compressive stress is found to be caused by excess electron influx onto the sample surface from the plasma. The following tensile and compressive stresses can be explained in terms of the oxide structure.

Original languageEnglish
Pages (from-to)62-66
Number of pages5
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - 2000 Jun
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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