Surface selectively deposited organic single-crystal transistor arrays with high device performance

Yun Li, Chuan Liu, Akichika Kumatani, Peter Darmawan, Takeo Minari, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5cm 2/Vs. And FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest FET is 7.4cm 2/Vs.

Original languageEnglish
Pages (from-to)13-17
Number of pages5
JournalMolecular crystals and liquid crystals
Volume566
Issue number1
DOIs
Publication statusPublished - 2012 Nov 1
Externally publishedYes

Keywords

  • Surface selectively deposition
  • organic field-effect transistor
  • organic single crystals
  • solvent-vapor annealing

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Surface selectively deposited organic single-crystal transistor arrays with high device performance'. Together they form a unique fingerprint.

Cite this