Surface selectively deposited organic single-crystal transistor arrays with high device performance

Yun Li; Chuan Liu; Akichika Kumatani; Peter Darmawan; Takeo Minari; Kazuhito Tsukagoshi

doi:10.1080/15421406.2012.703812

Surface selectively deposited organic single-crystal transistor arrays with high device performance

Yun Li, Chuan Liu, Akichika Kumatani, Peter Darmawan, Takeo Minari, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5cm ²/Vs. And FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest FET is 7.4cm ²/Vs.

Original language	English
Pages (from-to)	13-17
Number of pages	5
Journal	Molecular crystals and liquid crystals
Volume	566
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2012.703812
Publication status	Published - 2012 Nov 1
Externally published	Yes

Keywords

Surface selectively deposition
organic field-effect transistor
organic single crystals
solvent-vapor annealing

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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title = "Surface selectively deposited organic single-crystal transistor arrays with high device performance",

abstract = "A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5cm 2/Vs. And FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest FET is 7.4cm 2/Vs.",

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T1 - Surface selectively deposited organic single-crystal transistor arrays with high device performance

AU - Li, Yun

AU - Liu, Chuan

AU - Kumatani, Akichika

AU - Darmawan, Peter

AU - Minari, Takeo

AU - Tsukagoshi, Kazuhito

PY - 2012/11/1

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N2 - A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5cm 2/Vs. And FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest FET is 7.4cm 2/Vs.

AB - A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5cm 2/Vs. And FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest FET is 7.4cm 2/Vs.

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KW - solvent-vapor annealing

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