TY - JOUR
T1 - Surface selectively deposited organic single-crystal transistor arrays with high device performance
AU - Li, Yun
AU - Liu, Chuan
AU - Kumatani, Akichika
AU - Darmawan, Peter
AU - Minari, Takeo
AU - Tsukagoshi, Kazuhito
N1 - Funding Information:
This study is supported partially by the Grand-In-Aid for Scientific Research (No. 218505) from the Ministry of Education, Culture, Sport, Science and Technology of Japan.
PY - 2012/11/1
Y1 - 2012/11/1
N2 - A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5cm 2/Vs. And FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest FET is 7.4cm 2/Vs.
AB - A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (μFET) up to 3.5cm 2/Vs. And FET is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest FET is 7.4cm 2/Vs.
KW - Surface selectively deposition
KW - organic field-effect transistor
KW - organic single crystals
KW - solvent-vapor annealing
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U2 - 10.1080/15421406.2012.703812
DO - 10.1080/15421406.2012.703812
M3 - Article
AN - SCOPUS:84866622022
VL - 566
SP - 13
EP - 17
JO - Molecular Crystals and Liquid Crystals
JF - Molecular Crystals and Liquid Crystals
SN - 1542-1406
IS - 1
ER -