Surface roughening and metastable superstructures on wet-processed Si(111) surface induced by hydrogen desorption

T. Komeda, Y. Morita, H. Tokumoto

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) has revealed surface morphology changes of the hydrogen (H)-terminated Si(111) surface accompanied by hydrogen desorption. The atomically flat and H-terminated surface with regular straight steps was prepared by NH4F anisotropic etching. These straight step edges became rough when the surface was annealed at 490°C and then the H atoms were desorbed from the monohydride. This phenomenon was compared with previous reports on the behavior of SiHx clusters on the Si(111)-1 × 1:H formed on the Si(111)-7 × 7 surface. It was found that the model of the preferential detachment of SiH species from the step edges proposed for the latter case can also explain the phenomenon observed in the current experiment. The SiH species migrated over T4 sites on the surface and formed various superstructures, such as 2 × 2, c(2 × 4), and √3 × √3, after the desorption of H atoms. These superstructures might be considered to be metastable ones, and were converted into 7 × 7 structures with almost no defects after annealing at 700°C.

Original languageEnglish
Pages (from-to)153-160
Number of pages8
JournalSurface Science
Volume348
Issue number1-2
DOIs
Publication statusPublished - 1996 Mar 1
Externally publishedYes

Keywords

  • Low index single crystal surfaces
  • Scanning tunneling microscopy
  • Semiconducting surfaces
  • Silicon
  • Surface structure, morphology, roughness, and topography
  • Surface thermodynamics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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