Surface reconstruction and morphology evolution in highly strained inas epilayer growth on GaAs(0 0 1) surface

Q. Xue, T. Ogino, H. Kiyama, Y. Hasegawa, T. Sakurai

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    14 Citations (Scopus)

    Abstract

    Novel planar growth of highly strained heterostructure of InAs/GaAs(0 0 1) by molecular beam epitaxy (MBE) has been studied by an in situ scanning tunneling microscope (STM) and reflection high-energy electron diffraction (RHEED). It is found that deposition of submonolayer indium on the GaAs As-rich 2×4 substrate produces a new 4×2 reconstruction, and a novel layer-by-layer growth of multilayers of InAs can be achieved when the growing front displays this 4×2 symmetry. Here, we will discuss the atomic structure of the 4×2 reconstruction, based on the voltage-dependent high-resolution STM images. In addition, a new strain relaxation mechanism - domain wall structure, in terms of the present novel planar growth mode, will also be addressed.

    Original languageEnglish
    Pages (from-to)174-177
    Number of pages4
    JournalJournal of Crystal Growth
    Volume175-176
    Issue numberPART 1
    DOIs
    Publication statusPublished - 1997 May

    Keywords

    • GaAS
    • InAs
    • Layer-by-layer growth
    • MBE
    • STM

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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