TY - JOUR
T1 - Surface reconstruction and morphology evolution in highly strained inas epilayer growth on GaAs(0 0 1) surface
AU - Xue, Q.
AU - Ogino, T.
AU - Kiyama, H.
AU - Hasegawa, Y.
AU - Sakurai, T.
PY - 1997/5
Y1 - 1997/5
N2 - Novel planar growth of highly strained heterostructure of InAs/GaAs(0 0 1) by molecular beam epitaxy (MBE) has been studied by an in situ scanning tunneling microscope (STM) and reflection high-energy electron diffraction (RHEED). It is found that deposition of submonolayer indium on the GaAs As-rich 2×4 substrate produces a new 4×2 reconstruction, and a novel layer-by-layer growth of multilayers of InAs can be achieved when the growing front displays this 4×2 symmetry. Here, we will discuss the atomic structure of the 4×2 reconstruction, based on the voltage-dependent high-resolution STM images. In addition, a new strain relaxation mechanism - domain wall structure, in terms of the present novel planar growth mode, will also be addressed.
AB - Novel planar growth of highly strained heterostructure of InAs/GaAs(0 0 1) by molecular beam epitaxy (MBE) has been studied by an in situ scanning tunneling microscope (STM) and reflection high-energy electron diffraction (RHEED). It is found that deposition of submonolayer indium on the GaAs As-rich 2×4 substrate produces a new 4×2 reconstruction, and a novel layer-by-layer growth of multilayers of InAs can be achieved when the growing front displays this 4×2 symmetry. Here, we will discuss the atomic structure of the 4×2 reconstruction, based on the voltage-dependent high-resolution STM images. In addition, a new strain relaxation mechanism - domain wall structure, in terms of the present novel planar growth mode, will also be addressed.
KW - GaAS
KW - InAs
KW - Layer-by-layer growth
KW - MBE
KW - STM
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U2 - 10.1016/S0022-0248(96)01235-3
DO - 10.1016/S0022-0248(96)01235-3
M3 - Article
AN - SCOPUS:0031147609
VL - 175-176
SP - 174
EP - 177
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - PART 1
ER -