Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers

H. Okumura, K. Balakrishnan, H. Hamaguchi, V. Ishida, K. Ohta, S. Chichibu, G. Feuillet, S. Yoshida

Research output: Contribution to journalArticlepeer-review


Surface reconstructions and their transitions have been examined for MBE-grown GaN surfaces. Several types of reconstructions and their transitions were observed depending on growth condition, crystal structure etc. It is shown that the surface reconstruction phase diagram and its phase transition line are useful for the optimization of MBE growth of GaN. Little amount of As4 residual pressure was found to affect the structure of GaN growing surfaces. These As surfactant effects are discussed and the growth of cubic GaN under small amount of As4 pressure is reported.

Original languageEnglish
Pages (from-to)103-109
Number of pages7
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Issue number10
Publication statusPublished - 1998 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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