Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers

H. Okumura, H. Hamaguchi, K. Ohta, G. Feuillet, K. Balakrishnan, Y. Ishida, S. Chichibu, H. Nakanishi, T. Nagatomo, S. Yoshida

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Surface reconstructions and their transitions have been examined for MBE-grown GaN surfaces. Several types of reconstructions and their transitions were observed depending on growth condition, crystal structure etc. It is shown that the surface reconstruction phase diagram and its phase transition line are useful for the optimization of MBE growth of GaN. Little amount of As4 residual pressure was found to affect the structure of GaN growing surfaces. These As surfactant effects are discussed and the growth of cubic GaN under small amount of As4 pressure is reported.

Original languageEnglish
Pages (from-to)1167-1172
Number of pages6
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes

Keywords

  • Cubic
  • GaN
  • Growth Optimization
  • MBE
  • Surface Reconstruction
  • Surfactant

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Okumura, H., Hamaguchi, H., Ohta, K., Feuillet, G., Balakrishnan, K., Ishida, Y., Chichibu, S., Nakanishi, H., Nagatomo, T., & Yoshida, S. (1998). Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers. Materials Science Forum, 264-268(PART 2), 1167-1172. https://doi.org/10.4028/www.scientific.net/msf.264-268.1167