Abstract
Surface reconstructions and their transitions have been examined for MBE-grown GaN surfaces. Several types of reconstructions and their transitions were observed depending on growth condition, crystal structure etc. It is shown that the surface reconstruction phase diagram and its phase transition line are useful for the optimization of MBE growth of GaN. Little amount of As4 residual pressure was found to affect the structure of GaN growing surfaces. These As surfactant effects are discussed and the growth of cubic GaN under small amount of As4 pressure is reported.
| Original language | English |
|---|---|
| Pages (from-to) | 1167-1172 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 264-268 |
| Issue number | PART 2 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
| Externally published | Yes |
Keywords
- Cubic
- GaN
- Growth Optimization
- MBE
- Surface Reconstruction
- Surfactant
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Fingerprint Dive into the research topics of 'Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers'. Together they form a unique fingerprint.
Cite this
Okumura, H., Hamaguchi, H., Ohta, K., Feuillet, G., Balakrishnan, K., Ishida, Y., Chichibu, S., Nakanishi, H., Nagatomo, T., & Yoshida, S. (1998). Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers. Materials Science Forum, 264-268(PART 2), 1167-1172. https://doi.org/10.4028/www.scientific.net/msf.264-268.1167