Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers

H. Okumura; H. Hamaguchi; K. Ohta; G. Feuillet; K. Balakrishnan; Y. Ishida; S. Chichibu; H. Nakanishi; T. Nagatomo; S. Yoshida

doi:10.4028/www.scientific.net/msf.264-268.1167

Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers

H. Okumura, H. Hamaguchi, K. Ohta, G. Feuillet, K. Balakrishnan, Y. Ishida, S. Chichibu, H. Nakanishi, T. Nagatomo, S. Yoshida

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Surface reconstructions and their transitions have been examined for MBE-grown GaN surfaces. Several types of reconstructions and their transitions were observed depending on growth condition, crystal structure etc. It is shown that the surface reconstruction phase diagram and its phase transition line are useful for the optimization of MBE growth of GaN. Little amount of As₄ residual pressure was found to affect the structure of GaN growing surfaces. These As surfactant effects are discussed and the growth of cubic GaN under small amount of As₄ pressure is reported.

Original language	English
Pages (from-to)	1167-1172
Number of pages	6
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.264-268.1167
Publication status	Published - 1998
Externally published	Yes

Keywords

Cubic
GaN
Growth Optimization
MBE
Surface Reconstruction
Surfactant

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.4028/www.scientific.net/msf.264-268.1167

Cite this

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abstract = "Surface reconstructions and their transitions have been examined for MBE-grown GaN surfaces. Several types of reconstructions and their transitions were observed depending on growth condition, crystal structure etc. It is shown that the surface reconstruction phase diagram and its phase transition line are useful for the optimization of MBE growth of GaN. Little amount of As4 residual pressure was found to affect the structure of GaN growing surfaces. These As surfactant effects are discussed and the growth of cubic GaN under small amount of As4 pressure is reported.",

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T1 - Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers

AU - Okumura, H.

AU - Hamaguchi, H.

AU - Ohta, K.

AU - Feuillet, G.

AU - Balakrishnan, K.

AU - Ishida, Y.

AU - Chichibu, S.

AU - Nakanishi, H.

AU - Nagatomo, T.

AU - Yoshida, S.

PY - 1998

Y1 - 1998

N2 - Surface reconstructions and their transitions have been examined for MBE-grown GaN surfaces. Several types of reconstructions and their transitions were observed depending on growth condition, crystal structure etc. It is shown that the surface reconstruction phase diagram and its phase transition line are useful for the optimization of MBE growth of GaN. Little amount of As4 residual pressure was found to affect the structure of GaN growing surfaces. These As surfactant effects are discussed and the growth of cubic GaN under small amount of As4 pressure is reported.

AB - Surface reconstructions and their transitions have been examined for MBE-grown GaN surfaces. Several types of reconstructions and their transitions were observed depending on growth condition, crystal structure etc. It is shown that the surface reconstruction phase diagram and its phase transition line are useful for the optimization of MBE growth of GaN. Little amount of As4 residual pressure was found to affect the structure of GaN growing surfaces. These As surfactant effects are discussed and the growth of cubic GaN under small amount of As4 pressure is reported.

KW - Cubic

KW - GaN

KW - Growth Optimization

KW - MBE

KW - Surface Reconstruction

KW - Surfactant

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Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers

Abstract

Keywords

ASJC Scopus subject areas

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