Surface reactions during etching of organic low- k films by plasmas of N2 and H2

Kenji Ishikawa, Yoshikazu Yamaoka, Moritaka Nakamura, Yuichi Yamazaki, Satoshi Yamasaki, Yasushi Ishikawa, Seiji Samukawa

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35 Citations (Scopus)

Abstract

Surface reactions during etching of organic low- k film by N2 and H2 plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from N2 and H2. The number of carbon dangling bonds were greater in processes where H2 was present. The passivation of carbon dangling bonds leads to C H3, N H3, and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and C2 N2.

Original languageEnglish
Article number083305
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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