Surface reactions during etching of organic low- k films by plasmas of N2 and H2

Kenji Ishikawa; Yoshikazu Yamaoka; Moritaka Nakamura; Yuichi Yamazaki; Satoshi Yamasaki; Yasushi Ishikawa; Seiji Samukawa

doi:10.1063/1.2191567

Surface reactions during etching of organic low- k films by plasmas of N2 and H2

Kenji Ishikawa, Yoshikazu Yamaoka, Moritaka Nakamura, Yuichi Yamazaki, Satoshi Yamasaki, Yasushi Ishikawa, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Surface reactions during etching of organic low- k film by N2 and H2 plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from N2 and H2. The number of carbon dangling bonds were greater in processes where H2 was present. The passivation of carbon dangling bonds leads to C H3, N H3, and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and C2 N2.

Original language	English
Article number	083305
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2191567
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2191567

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@article{361676f7e45345c4b1d7bb17eb9a33cc,

title = "Surface reactions during etching of organic low- k films by plasmas of N2 and H2",

abstract = "Surface reactions during etching of organic low- k film by N2 and H2 plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from N2 and H2. The number of carbon dangling bonds were greater in processes where H2 was present. The passivation of carbon dangling bonds leads to C H3, N H3, and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and C2 N2.",

author = "Kenji Ishikawa and Yoshikazu Yamaoka and Moritaka Nakamura and Yuichi Yamazaki and Satoshi Yamasaki and Yasushi Ishikawa and Seiji Samukawa",

note = "Funding Information: The authors would like to thank A. Egami, K. Kurihara, K. Karahashi, T. Yasuda, and J. Isoya for helpful technical advices, K. Shimokawa for assistance with sample preparation, and Rasa Industries, Ltd. and Honeywell Electric Materials, Ltd. for providing the FLARE GX-3 samples. This work was partly supported by the New Energy and Industrial Development Organization (NEDO).",

year = "2006",

doi = "10.1063/1.2191567",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Surface reactions during etching of organic low- k films by plasmas of N2 and H2

AU - Ishikawa, Kenji

AU - Yamaoka, Yoshikazu

AU - Nakamura, Moritaka

AU - Yamazaki, Yuichi

AU - Yamasaki, Satoshi

AU - Ishikawa, Yasushi

AU - Samukawa, Seiji

N1 - Funding Information: The authors would like to thank A. Egami, K. Kurihara, K. Karahashi, T. Yasuda, and J. Isoya for helpful technical advices, K. Shimokawa for assistance with sample preparation, and Rasa Industries, Ltd. and Honeywell Electric Materials, Ltd. for providing the FLARE GX-3 samples. This work was partly supported by the New Energy and Industrial Development Organization (NEDO).

PY - 2006

Y1 - 2006

N2 - Surface reactions during etching of organic low- k film by N2 and H2 plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from N2 and H2. The number of carbon dangling bonds were greater in processes where H2 was present. The passivation of carbon dangling bonds leads to C H3, N H3, and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and C2 N2.

AB - Surface reactions during etching of organic low- k film by N2 and H2 plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from N2 and H2. The number of carbon dangling bonds were greater in processes where H2 was present. The passivation of carbon dangling bonds leads to C H3, N H3, and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and C2 N2.

UR - http://www.scopus.com/inward/record.url?scp=33646720474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646720474&partnerID=8YFLogxK

U2 - 10.1063/1.2191567

DO - 10.1063/1.2191567

M3 - Article

AN - SCOPUS:33646720474

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083305

ER -

Surface reactions during etching of organic low- k films by plasmas of N2 and H2

Abstract

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