Surface reaction of alternately supplied WF6 and SiH4 gases

Yuji Yamamoto, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The surface reaction of WF6 and SiH4 gases at ∼100°C was investigated using an ultraclean cold-wall LPCVD system with analysis by XPS and FT-IR. By supplying only WF6 onto the hydrogen-desorbed Si(100) surface, which was prepared by preheating in Ar, dissociative adsorption of WF6 occurred generating WFx and Si-F was formed on the Si surface. On the HF-treated Si-dihydride surface, however, very little adsorption of WF6 was observed. This means that adsorption of WF6 is enhanced by hydrogen desorption on the Si surface. Based on the results on the alternate WF6 and SiH4 supply experiments, it is proposed that SiH4 adsorbs on the WFx-adsorbed surface receiving F from WFx to become an Si-containing species, and further WF6 supply causes WFx adsorption accompanied with desorption of the Si-containing species.

Original languageEnglish
Pages (from-to)190-194
Number of pages5
JournalSurface Science
Volume408
Issue number1-3
DOIs
Publication statusPublished - 1998 Jun 15

Keywords

  • Chemical vapor deposition (CVD)
  • SiH
  • Surface reaction
  • W
  • WF

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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