Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam

Seiji Samukawa; Butsurinn Jinnai; Fumihiko Oda; Yukihiro Morimoto

doi:10.1143/JJAP.46.L64

Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam

Seiji Samukawa, Butsurinn Jinnai, Fumihiko Oda, Yukihiro Morimoto

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We investigated the dependence of etching rate on irradiation of photons with a UV lamp during Si etching processes with chlorine atom beam to understand the influence of UV photon irradiation in the plasma etching process. We found that UV from 220 to 380 nm drastically enhanced Si surface reactions with a chlorine atom beam at lamp power densities over 20 mW/ cm². Additionally, we were able to control the Si etching rate by changing the photon irradiation power density. These results led us to speculate that the irradiation of UV photons from 220 to 380 nm generates crystal defects on the Si surface and enhances chemical reactions between Si and chlorine during Cl ₂ plasma etching processes.

Original language	English
Pages (from-to)	L64-L66
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	46
Issue number	1-3
DOIs	https://doi.org/10.1143/JJAP.46.L64
Publication status	Published - 2007 Jan 12

Keywords

Defect generation
Etching reaction
Neutral beam etching
Plasma etching
UV photon assisted reaction

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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title = "Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam",

abstract = "We investigated the dependence of etching rate on irradiation of photons with a UV lamp during Si etching processes with chlorine atom beam to understand the influence of UV photon irradiation in the plasma etching process. We found that UV from 220 to 380 nm drastically enhanced Si surface reactions with a chlorine atom beam at lamp power densities over 20 mW/ cm2. Additionally, we were able to control the Si etching rate by changing the photon irradiation power density. These results led us to speculate that the irradiation of UV photons from 220 to 380 nm generates crystal defects on the Si surface and enhances chemical reactions between Si and chlorine during Cl 2 plasma etching processes.",

keywords = "Defect generation, Etching reaction, Neutral beam etching, Plasma etching, UV photon assisted reaction",

author = "Seiji Samukawa and Butsurinn Jinnai and Fumihiko Oda and Yukihiro Morimoto",

year = "2007",

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doi = "10.1143/JJAP.46.L64",

language = "English",

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T1 - Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam

AU - Samukawa, Seiji

AU - Jinnai, Butsurinn

AU - Oda, Fumihiko

AU - Morimoto, Yukihiro

PY - 2007/1/12

Y1 - 2007/1/12

N2 - We investigated the dependence of etching rate on irradiation of photons with a UV lamp during Si etching processes with chlorine atom beam to understand the influence of UV photon irradiation in the plasma etching process. We found that UV from 220 to 380 nm drastically enhanced Si surface reactions with a chlorine atom beam at lamp power densities over 20 mW/ cm2. Additionally, we were able to control the Si etching rate by changing the photon irradiation power density. These results led us to speculate that the irradiation of UV photons from 220 to 380 nm generates crystal defects on the Si surface and enhances chemical reactions between Si and chlorine during Cl 2 plasma etching processes.

AB - We investigated the dependence of etching rate on irradiation of photons with a UV lamp during Si etching processes with chlorine atom beam to understand the influence of UV photon irradiation in the plasma etching process. We found that UV from 220 to 380 nm drastically enhanced Si surface reactions with a chlorine atom beam at lamp power densities over 20 mW/ cm2. Additionally, we were able to control the Si etching rate by changing the photon irradiation power density. These results led us to speculate that the irradiation of UV photons from 220 to 380 nm generates crystal defects on the Si surface and enhances chemical reactions between Si and chlorine during Cl 2 plasma etching processes.

KW - Defect generation

KW - Etching reaction

KW - Neutral beam etching

KW - Plasma etching

KW - UV photon assisted reaction

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam

Abstract

Keywords

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