Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films

Hang Sup Cho, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

Abstract

The dry etching characteristics of B-doped Si1-xGex epitaxial films have been investigated using an electron-cyclotron-resonance chlorine plasma. The etch rate of Si1-xGex films increases with increasing Ge fraction and decreases with B doping. In particular, for the chlorine radical-dominant etching, the etch rate of B-doped films decreases with increasing etching time. The phenomena are caused by the segregation of B atoms on the etched surface. The segregated B atom concentration for B-doped Ge film is larger than that for B-doped Si film. It is also suggested that the decrease of B atom concentration when increasing the etching time for the Si1-xGex films is caused by the segregation of Si atoms on the etched surface.

Original languageEnglish
Pages (from-to)301-304
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Keywords

  • B-doped SiGe
  • Electron-cyclotron-resonance chlorine plasma
  • Plasma etching
  • Radical dominant etching
  • Segregation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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