Surface protrusions of chemical vapor deposited TiN films caused by Cu contamination of silicon substrates

D. Cheng, Y. Ogawa, H. Hamamura, H. Shirakawa, T. Osawa, S. Takami, H. Komiyama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We found that surface protrusions of chemical vapor deposited TiN films are caused by reactions between copper contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. The silicon dioxide is formed because of the catalytic role of copper silicide. The defects grow both into and out of the silicon substrate. In the formation of copper silicide and silicon dioxide, copper, silicon, and oxygen are the major participating species.

Original languageEnglish
Pages (from-to)L607-L609
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number5 B
DOIs
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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