Surface polarity effects on the hydride vapor phase epitaxial growth of GaN on 6H-SiC with a chrome nitride buffer layer

J. Park, H. J. Lee, S. W. Lee, J. S. Ha, Shinji Nagata, S. K. Hong, H. Y. Lee, M. W. Cho, T. Yao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A CrN buffer layer was introduced to 6H-SiC substrate to aid the subsequent hydride vapor phase epitaxial growth of GaN. Crystallinities of GaN layers grown on both Si- and C-terminated surfaces of 6H-SiC wafers with and without CrN layers were compared. On Si-terminated SiC, CrN formed with a trigonal morphology, indicating a good crystallographic relationship with growth along the 111 axis. CrN formed randomly on C-terminated SiC, leading to the subsequent GaN growth occurring with no preferred orientation, suggesting deteriorated crystallinity. High-quality GaN layers were grown on the CrN buffered Si-terminated SiC.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume15
Issue number5
DOIs
Publication statusPublished - 2012 Apr 30

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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