Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning

K. Sawano; K. Kawaguchi; S. Koh; Y. Hirose; T. Hattori; K. Nakagawa; Y. Shiraki

doi:10.1149/1.1576773

Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning

K. Sawano, K. Kawaguchi, S. Koh, Y. Hirose, T. Hattori, K. Nakagawa, Y. Shiraki

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Surface planarization of strain-relaxed SiGe buffer layers by chemical mechanical polishing (CMP), particularly the influence of a post-CMP cleaning process which is indispensable after CMP, on the surface morphology of SiGe buffer layers was investigated. It was found that the cleaning tended to enhance the surface roughness due to the etching effect that increased with increasing cleaning temperature. The etching effect was suppressed by optimizing cleaning reagents, and the ultrasmooth surfaces of SiGe buffer layers with Ge contents of 30 to 70% were obtained, irrespective to growth methods. The root mean square roughness reached 0.4 to 0.6 nm, which was the lowest value that was ever obtained.

Original language	English
Pages (from-to)	G376-G379
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	7
DOIs	https://doi.org/10.1149/1.1576773
Publication status	Published - 2003 Jul 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

Access to Document

10.1149/1.1576773

Fingerprint Dive into the research topics of 'Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning'. Together they form a unique fingerprint.

Cite this

@article{bca825347b5049f5811ba0892b3f0a72,

title = "Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning",

abstract = "Surface planarization of strain-relaxed SiGe buffer layers by chemical mechanical polishing (CMP), particularly the influence of a post-CMP cleaning process which is indispensable after CMP, on the surface morphology of SiGe buffer layers was investigated. It was found that the cleaning tended to enhance the surface roughness due to the etching effect that increased with increasing cleaning temperature. The etching effect was suppressed by optimizing cleaning reagents, and the ultrasmooth surfaces of SiGe buffer layers with Ge contents of 30 to 70% were obtained, irrespective to growth methods. The root mean square roughness reached 0.4 to 0.6 nm, which was the lowest value that was ever obtained.",

author = "K. Sawano and K. Kawaguchi and S. Koh and Y. Hirose and T. Hattori and K. Nakagawa and Y. Shiraki",

year = "2003",

month = jul,

day = "1",

doi = "10.1149/1.1576773",

language = "English",

volume = "150",

pages = "G376--G379",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning

AU - Sawano, K.

AU - Kawaguchi, K.

AU - Koh, S.

AU - Hirose, Y.

AU - Hattori, T.

AU - Nakagawa, K.

AU - Shiraki, Y.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - Surface planarization of strain-relaxed SiGe buffer layers by chemical mechanical polishing (CMP), particularly the influence of a post-CMP cleaning process which is indispensable after CMP, on the surface morphology of SiGe buffer layers was investigated. It was found that the cleaning tended to enhance the surface roughness due to the etching effect that increased with increasing cleaning temperature. The etching effect was suppressed by optimizing cleaning reagents, and the ultrasmooth surfaces of SiGe buffer layers with Ge contents of 30 to 70% were obtained, irrespective to growth methods. The root mean square roughness reached 0.4 to 0.6 nm, which was the lowest value that was ever obtained.

AB - Surface planarization of strain-relaxed SiGe buffer layers by chemical mechanical polishing (CMP), particularly the influence of a post-CMP cleaning process which is indispensable after CMP, on the surface morphology of SiGe buffer layers was investigated. It was found that the cleaning tended to enhance the surface roughness due to the etching effect that increased with increasing cleaning temperature. The etching effect was suppressed by optimizing cleaning reagents, and the ultrasmooth surfaces of SiGe buffer layers with Ge contents of 30 to 70% were obtained, irrespective to growth methods. The root mean square roughness reached 0.4 to 0.6 nm, which was the lowest value that was ever obtained.

UR - http://www.scopus.com/inward/record.url?scp=0037768763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037768763&partnerID=8YFLogxK

U2 - 10.1149/1.1576773

DO - 10.1149/1.1576773

M3 - Article

AN - SCOPUS:0037768763

VL - 150

SP - G376-G379

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 7

ER -

Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Cite this