Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient

N. Yoshida; S. Chichibu; T. Akane; M. Totsuka; H. Uji; S. Matsumoto; H. Higuchi

doi:10.1063/1.110250

Surface passivation of GaAs using ArF excimer laser in a H₂S gas ambient

N. Yoshida, S. Chichibu, T. Akane, M. Totsuka, H. Uji, S. Matsumoto, H. Higuchi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A dry surface passivation of GaAs using the combination of H₂S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H₂S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH₄)₂S_x treatment in terms of the sulfur coverage ratio.

Original language	English
Pages (from-to)	3035-3037
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	22
DOIs	https://doi.org/10.1063/1.110250
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110250

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abstract = "A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.",

author = "N. Yoshida and S. Chichibu and T. Akane and M. Totsuka and H. Uji and S. Matsumoto and H. Higuchi",

year = "1993",

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T1 - Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient

AU - Yoshida, N.

AU - Chichibu, S.

AU - Akane, T.

AU - Totsuka, M.

AU - Uji, H.

AU - Matsumoto, S.

AU - Higuchi, H.

PY - 1993

Y1 - 1993

N2 - A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.

AB - A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.

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DO - 10.1063/1.110250

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JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -

Surface passivation of GaAs using ArF excimer laser in a H₂S gas ambient

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