Surface passivation of crystalline silicon by sputtered AlOx/AlNx stacks toward low-cost high-efficiency silicon solar cells

Hyunju Lee, Keigo Ueda, Yuya Enomoto, Koji Arafune, Haruhiko Yoshida, Shin Ichi Satoh, Toyohiro Chikyow, Atsushi Ogura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Recently, excellent surface passivation has been achieved for both p- and n-type silicon solar cells using AlOx/SiNx:H stacks deposited by atomic layer deposition and plasma-enhanced chemical vapor deposition. However, alternative materials and deposition methods could provide practical options for large-scale manufacturing of commercial solar cells. In this study we demonstrate that AlOx/AlNx stacks fabricated by reactive radiofrequency magnetron sputtering can provide fairly good surface passivation (Smax of ∼30cm/s) regardless of AlOx thickness, which is found to be due to the high negative fixed charge density (Qeff of -2.8 × 1012cm-2) and moderately low interface trap density (Dit of 2.0 × 1011 eV-1.cm-2). The stacks also show fairly good antireflection performance in the visible and near-infrared spectral region. The demonstrated surface passivation and antireflection performance of in situ reactively sputtered AlOx/AlNx stacks make them a promising candidate for a surface-passivating antireflection coating on silicon solar cells.

Original languageEnglish
Article number08KD18
JournalJapanese journal of applied physics
Volume54
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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