TY - JOUR
T1 - Surface passivation of crystalline silicon by sputtered AlOx/AlNx stacks toward low-cost high-efficiency silicon solar cells
AU - Lee, Hyunju
AU - Ueda, Keigo
AU - Enomoto, Yuya
AU - Arafune, Koji
AU - Yoshida, Haruhiko
AU - Satoh, Shin Ichi
AU - Chikyow, Toyohiro
AU - Ogura, Atsushi
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - Recently, excellent surface passivation has been achieved for both p- and n-type silicon solar cells using AlOx/SiNx:H stacks deposited by atomic layer deposition and plasma-enhanced chemical vapor deposition. However, alternative materials and deposition methods could provide practical options for large-scale manufacturing of commercial solar cells. In this study we demonstrate that AlOx/AlNx stacks fabricated by reactive radiofrequency magnetron sputtering can provide fairly good surface passivation (Smax of ∼30cm/s) regardless of AlOx thickness, which is found to be due to the high negative fixed charge density (Qeff of -2.8 × 1012cm-2) and moderately low interface trap density (Dit of 2.0 × 1011 eV-1.cm-2). The stacks also show fairly good antireflection performance in the visible and near-infrared spectral region. The demonstrated surface passivation and antireflection performance of in situ reactively sputtered AlOx/AlNx stacks make them a promising candidate for a surface-passivating antireflection coating on silicon solar cells.
AB - Recently, excellent surface passivation has been achieved for both p- and n-type silicon solar cells using AlOx/SiNx:H stacks deposited by atomic layer deposition and plasma-enhanced chemical vapor deposition. However, alternative materials and deposition methods could provide practical options for large-scale manufacturing of commercial solar cells. In this study we demonstrate that AlOx/AlNx stacks fabricated by reactive radiofrequency magnetron sputtering can provide fairly good surface passivation (Smax of ∼30cm/s) regardless of AlOx thickness, which is found to be due to the high negative fixed charge density (Qeff of -2.8 × 1012cm-2) and moderately low interface trap density (Dit of 2.0 × 1011 eV-1.cm-2). The stacks also show fairly good antireflection performance in the visible and near-infrared spectral region. The demonstrated surface passivation and antireflection performance of in situ reactively sputtered AlOx/AlNx stacks make them a promising candidate for a surface-passivating antireflection coating on silicon solar cells.
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U2 - 10.7567/JJAP.54.08KD18
DO - 10.7567/JJAP.54.08KD18
M3 - Article
AN - SCOPUS:84938518264
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 08KD18
ER -