Surface oxidation of electromagnetically levitated molten silicon under a condition of oxygen-supersaturation

Taketoshi Hibiya, Satoshi Hokama, Yusuke Koike, Masaki Rinno, Hiroshi Kawamura, Hiroyuki Fukuyama, Kensuke Higuchi, Masahito Watanabe

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Surface oxidation of a molten silicon droplet levitated under undercooled and oxygen-supersaturated conditions was observed. After the melt surface was covered with a SiO2 film, temperature fluctuation took place; this mainly corresponds to two competing phenomena, i.e. the exothermic reaction of SiO2 formation and the endothermic reaction of SiO evaporation, which enhances the undercooling.

Original languageEnglish
Pages (from-to)695-699
Number of pages5
JournalScripta Materialia
Volume54
Issue number4 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Feb

Keywords

  • Elemental semiconductors
  • Image analysis
  • Solidification
  • Thermodynamics
  • Undercooling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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