Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)

Shozo Kono; Tadahiko Goto; Tadashi Abukawa; Christph Wild; Peter Koidl; Hiroshi Kawarada

doi:10.1143/jjap.39.4372

Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)

Shozo Kono, Tadahiko Goto, Tadashi Abukawa, Christph Wild, Peter Koidl, Hiroshi Kawarada

SR Core Research Division

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 Å.

Original language	English
Pages (from-to)	4372-4373
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	7 B
DOIs	https://doi.org/10.1143/jjap.39.4372
Publication status	Published - 2000

Keywords

C(001)
Diamond surface
Heteroepitaxial diamond film
Micro-electron beam RHEED
UHV-SEM

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.4372

Cite this

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abstract = "The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 {\AA}.",

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year = "2000",

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AU - Kono, Shozo

AU - Goto, Tadahiko

AU - Abukawa, Tadashi

AU - Wild, Christph

AU - Koidl, Peter

AU - Kawarada, Hiroshi

PY - 2000

Y1 - 2000

N2 - The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 Å.

AB - The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 Å.

KW - C(001)

KW - Diamond surface

KW - Heteroepitaxial diamond film

KW - Micro-electron beam RHEED

KW - UHV-SEM

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7 B

ER -

Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)

Abstract

Keywords

ASJC Scopus subject areas

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