Surface nitridation of c-plane sapphire substrate by near-atmospheric nitrogen plasma

Takahiro Nagata, Masamitsu Haemori, Junichiro Anzai, Tsuyoshi Uehara, Toyohiro Chikyow

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6 Citations (Scopus)


The nitridation of c-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al-N and O-N bonds.

Original languageEnglish
Article number040206
JournalJapanese journal of applied physics
Issue number4
Publication statusPublished - 2009 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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