Surface nitridation of c-plane sapphire substrate by near-atmospheric nitrogen plasma

Takahiro Nagata; Masamitsu Haemori; Junichiro Anzai; Tsuyoshi Uehara; Toyohiro Chikyow

doi:10.1143/JJAP.48.040206

Surface nitridation of c-plane sapphire substrate by near-atmospheric nitrogen plasma

Takahiro Nagata, Masamitsu Haemori, Junichiro Anzai, Tsuyoshi Uehara, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The nitridation of c-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al-N and O-N bonds.

Original language	English
Article number	040206
Journal	Japanese journal of applied physics
Volume	48
Issue number	4
DOIs	https://doi.org/10.1143/JJAP.48.040206
Publication status	Published - 2009 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "The nitridation of c-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al-N and O-N bonds.",

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AU - Nagata, Takahiro

AU - Haemori, Masamitsu

AU - Anzai, Junichiro

AU - Uehara, Tsuyoshi

AU - Chikyow, Toyohiro

PY - 2009/4/1

Y1 - 2009/4/1

N2 - The nitridation of c-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al-N and O-N bonds.

AB - The nitridation of c-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al-N and O-N bonds.

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Surface nitridation of c-plane sapphire substrate by near-atmospheric nitrogen plasma

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