TY - JOUR
T1 - Surface nitridation of c-plane sapphire substrate by near-atmospheric nitrogen plasma
AU - Nagata, Takahiro
AU - Haemori, Masamitsu
AU - Anzai, Junichiro
AU - Uehara, Tsuyoshi
AU - Chikyow, Toyohiro
PY - 2009/4/1
Y1 - 2009/4/1
N2 - The nitridation of c-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al-N and O-N bonds.
AB - The nitridation of c-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al-N and O-N bonds.
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U2 - 10.1143/JJAP.48.040206
DO - 10.1143/JJAP.48.040206
M3 - Article
AN - SCOPUS:67849101753
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 040206
ER -