Abstract
The atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation-induced stress in bulk SiO2. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.
Original language | English |
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Pages (from-to) | 163-167 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 567 |
DOIs | |
Publication status | Published - 1999 |
Event | Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 8 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering