Surface morphology of ultrathin oxide formed on Si(100)

T. Hattori; M. Fujimura; H. Nohira

doi:10.1557/proc-567-163

Surface morphology of ultrathin oxide formed on Si(100)

T. Hattori, M. Fujimura, H. Nohira

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation-induced stress in bulk SiO₂. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.

Original language	English
Pages (from-to)	163-167
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	567
DOIs	https://doi.org/10.1557/proc-567-163
Publication status	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 8

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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abstract = "The atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation-induced stress in bulk SiO2. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.",

author = "T. Hattori and M. Fujimura and H. Nohira",

year = "1999",

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journal = "Materials Research Society Symposium - Proceedings",

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T1 - Surface morphology of ultrathin oxide formed on Si(100)

AU - Hattori, T.

AU - Fujimura, M.

AU - Nohira, H.

PY - 1999

Y1 - 1999

N2 - The atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation-induced stress in bulk SiO2. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.

AB - The atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation-induced stress in bulk SiO2. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.

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JF - Materials Research Society Symposium - Proceedings

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T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics

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