Surface morphology of ultrathin oxide formed on Si(100)

T. Hattori, M. Fujimura, H. Nohira

    Research output: Contribution to journalConference article

    1 Citation (Scopus)

    Abstract

    The atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation-induced stress in bulk SiO2. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.

    Original languageEnglish
    Pages (from-to)163-167
    Number of pages5
    JournalMaterials Research Society Symposium - Proceedings
    Volume567
    DOIs
    Publication statusPublished - 1999
    EventProceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA
    Duration: 1999 Apr 51999 Apr 8

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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