Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy

Jianrong Yang; Haruyuki Yasuda; Shanlee Wang; Fumihiro Matsukura; Yuzo Ohno; Hideo Ohno

doi:10.1016/S0169-4332(00)00429-3

Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy

Jianrong Yang, Haruyuki Yasuda, Shanlee Wang, Fumihiro Matsukura, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) observation are performed on (Ga, Mn)As grown by molecular beam epitaxy (MBE) under several conditions. The surface morphology observation of (Ga, Mn)As epitaxial layers shows that the surface roughness of homogeneous (Ga, Mn)As epitaxial layer with a thickness 200 nm grown by low temperature MBE is less than 1 nm. Transition from 2D to 3D growth was found to always accompany the appearance of hexagonal structure on the surface. These results suggest that the formation of small MnAs clusters is responsible for the roughening of the surface.

Original language	English
Pages (from-to)	242-246
Number of pages	5
Journal	Applied Surface Science
Volume	166
Issue number	1
DOIs	https://doi.org/10.1016/S0169-4332(00)00429-3
Publication status	Published - 2000 Oct 9

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy",

abstract = "The atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) observation are performed on (Ga, Mn)As grown by molecular beam epitaxy (MBE) under several conditions. The surface morphology observation of (Ga, Mn)As epitaxial layers shows that the surface roughness of homogeneous (Ga, Mn)As epitaxial layer with a thickness 200 nm grown by low temperature MBE is less than 1 nm. Transition from 2D to 3D growth was found to always accompany the appearance of hexagonal structure on the surface. These results suggest that the formation of small MnAs clusters is responsible for the roughening of the surface.",

author = "Jianrong Yang and Haruyuki Yasuda and Shanlee Wang and Fumihiro Matsukura and Yuzo Ohno and Hideo Ohno",

note = "Funding Information: This work was partly supported by “Research for the Future” Program from the Japan Society for the Promotion of Science (JSPS-RFTF 97P00202), and by a Grand-in-Aids for the Scientific Research from the Ministry of Education, Science, Sports, and Culture, Japan (No. 09244103 and No. 10450002).",

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T1 - Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy

AU - Yang, Jianrong

AU - Yasuda, Haruyuki

AU - Wang, Shanlee

AU - Matsukura, Fumihiro

AU - Ohno, Yuzo

AU - Ohno, Hideo

N1 - Funding Information: This work was partly supported by “Research for the Future” Program from the Japan Society for the Promotion of Science (JSPS-RFTF 97P00202), and by a Grand-in-Aids for the Scientific Research from the Ministry of Education, Science, Sports, and Culture, Japan (No. 09244103 and No. 10450002).

PY - 2000/10/9

Y1 - 2000/10/9

N2 - The atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) observation are performed on (Ga, Mn)As grown by molecular beam epitaxy (MBE) under several conditions. The surface morphology observation of (Ga, Mn)As epitaxial layers shows that the surface roughness of homogeneous (Ga, Mn)As epitaxial layer with a thickness 200 nm grown by low temperature MBE is less than 1 nm. Transition from 2D to 3D growth was found to always accompany the appearance of hexagonal structure on the surface. These results suggest that the formation of small MnAs clusters is responsible for the roughening of the surface.

AB - The atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) observation are performed on (Ga, Mn)As grown by molecular beam epitaxy (MBE) under several conditions. The surface morphology observation of (Ga, Mn)As epitaxial layers shows that the surface roughness of homogeneous (Ga, Mn)As epitaxial layer with a thickness 200 nm grown by low temperature MBE is less than 1 nm. Transition from 2D to 3D growth was found to always accompany the appearance of hexagonal structure on the surface. These results suggest that the formation of small MnAs clusters is responsible for the roughening of the surface.

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