TY - JOUR
T1 - Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy
AU - Yang, Jianrong
AU - Yasuda, Haruyuki
AU - Wang, Shanlee
AU - Matsukura, Fumihiro
AU - Ohno, Yuzo
AU - Ohno, Hideo
N1 - Funding Information:
This work was partly supported by “Research for the Future” Program from the Japan Society for the Promotion of Science (JSPS-RFTF 97P00202), and by a Grand-in-Aids for the Scientific Research from the Ministry of Education, Science, Sports, and Culture, Japan (No. 09244103 and No. 10450002).
PY - 2000/10/9
Y1 - 2000/10/9
N2 - The atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) observation are performed on (Ga, Mn)As grown by molecular beam epitaxy (MBE) under several conditions. The surface morphology observation of (Ga, Mn)As epitaxial layers shows that the surface roughness of homogeneous (Ga, Mn)As epitaxial layer with a thickness 200 nm grown by low temperature MBE is less than 1 nm. Transition from 2D to 3D growth was found to always accompany the appearance of hexagonal structure on the surface. These results suggest that the formation of small MnAs clusters is responsible for the roughening of the surface.
AB - The atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) observation are performed on (Ga, Mn)As grown by molecular beam epitaxy (MBE) under several conditions. The surface morphology observation of (Ga, Mn)As epitaxial layers shows that the surface roughness of homogeneous (Ga, Mn)As epitaxial layer with a thickness 200 nm grown by low temperature MBE is less than 1 nm. Transition from 2D to 3D growth was found to always accompany the appearance of hexagonal structure on the surface. These results suggest that the formation of small MnAs clusters is responsible for the roughening of the surface.
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U2 - 10.1016/S0169-4332(00)00429-3
DO - 10.1016/S0169-4332(00)00429-3
M3 - Article
AN - SCOPUS:0034301871
VL - 166
SP - 242
EP - 246
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1
ER -