Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy

Jianrong Yang, Haruyuki Yasuda, Shanlee Wang, Fumihiro Matsukura, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) observation are performed on (Ga, Mn)As grown by molecular beam epitaxy (MBE) under several conditions. The surface morphology observation of (Ga, Mn)As epitaxial layers shows that the surface roughness of homogeneous (Ga, Mn)As epitaxial layer with a thickness 200 nm grown by low temperature MBE is less than 1 nm. Transition from 2D to 3D growth was found to always accompany the appearance of hexagonal structure on the surface. These results suggest that the formation of small MnAs clusters is responsible for the roughening of the surface.

Original languageEnglish
Pages (from-to)242-246
Number of pages5
JournalApplied Surface Science
Volume166
Issue number1
DOIs
Publication statusPublished - 2000 Oct 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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