Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy

Huaizhe Xu, K. Ohtani, M. Yamao, H. Ohno

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52 Citations (Scopus)

Abstract

Homoepitaxial ZnO layers are grown on Zn-polar (0001) and O-polar (0001) surfaces of single crystal ZnO substrates by plasma assisted molecular beam epitaxy. It is found that the growth conditions to obtain smooth surfaces are significantly different for the two surface polarities. For growth on Zn-polar surface, moderate temperature (650°C) and highly O-rich condition (low Zn/O2) are required, while high temperature (1000-1050°C) and Zn-rich condition (high Zn/O2 ratio) are essential for growth on O-polar surfaces.

Original languageEnglish
Article number071918
JournalApplied Physics Letters
Volume89
Issue number7
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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