Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition

Zhenhua He; Hirokazu Katsui; Rong Tu; Takashi Goto

doi:10.4028/www.scientific.net/KEM.616.232

Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition

Zhenhua He, Hirokazu Katsui, Rong Tu, Takashi Goto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO₂) using (C₂H₅O ₄)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO₂ coating increased from 1 to 35 mass%. The SiO₂ mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O₂ gas flow, deposition temperature (T_dep), total pressure (P_tot) and precursor vaporization temperature (T_vap) on the SiO₂ yield by RCVD were investigated. At O₂ gas flow of 4.2 × 10^-7 m³ s^-1, T_dep of 948 K, P _tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO ₂ yield of 1.82 × 10^-7 kg/s with SiC powder of 4.5 × 10^-3 kg by RCVD was obtained.

Original language	English
Title of host publication	Advanced Ceramics and Novel Processing
Publisher	Trans Tech Publications Ltd
Pages	232-236
Number of pages	5
ISBN (Print)	9783038351306
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.616.232
Publication status	Published - 2014
Event	5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China Duration: 2013 Dec 9 → 2013 Dec 12

Publication series

Name	Key Engineering Materials
Volume	616
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Other

Other	5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
Country	China
City	Wuhan
Period	13/12/9 → 13/12/12

Keywords

Rotary chemical vapor deposition
Silica
Silicon carbide
Surface modification

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition. / He, Zhenhua; Katsui, Hirokazu; Tu, Rong; Goto, Takashi.

Advanced Ceramics and Novel Processing. Trans Tech Publications Ltd, 2014. p. 232-236 (Key Engineering Materials; Vol. 616).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

He, Z, Katsui, H, Tu, R & Goto, T 2014, Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition. in Advanced Ceramics and Novel Processing. Key Engineering Materials, vol. 616, Trans Tech Publications Ltd, pp. 232-236, 5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013, Wuhan, China, 13/12/9. https://doi.org/10.4028/www.scientific.net/KEM.616.232

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title = "Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition",

abstract = "The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O 4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating increased from 1 to 35 mass%. The SiO2 mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O2 gas flow, deposition temperature (Tdep), total pressure (Ptot) and precursor vaporization temperature (Tvap) on the SiO2 yield by RCVD were investigated. At O2 gas flow of 4.2 × 10-7 m3 s-1, Tdep of 948 K, P tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO 2 yield of 1.82 × 10-7 kg/s with SiC powder of 4.5 × 10-3 kg by RCVD was obtained.",

keywords = "Rotary chemical vapor deposition, Silica, Silicon carbide, Surface modification",

author = "Zhenhua He and Hirokazu Katsui and Rong Tu and Takashi Goto",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 ; Conference date: 09-12-2013 Through 12-12-2013",

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AU - He, Zhenhua

AU - Katsui, Hirokazu

AU - Tu, Rong

AU - Goto, Takashi

PY - 2014

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N2 - The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O 4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating increased from 1 to 35 mass%. The SiO2 mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O2 gas flow, deposition temperature (Tdep), total pressure (Ptot) and precursor vaporization temperature (Tvap) on the SiO2 yield by RCVD were investigated. At O2 gas flow of 4.2 × 10-7 m3 s-1, Tdep of 948 K, P tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO 2 yield of 1.82 × 10-7 kg/s with SiC powder of 4.5 × 10-3 kg by RCVD was obtained.

AB - The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O 4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating increased from 1 to 35 mass%. The SiO2 mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O2 gas flow, deposition temperature (Tdep), total pressure (Ptot) and precursor vaporization temperature (Tvap) on the SiO2 yield by RCVD were investigated. At O2 gas flow of 4.2 × 10-7 m3 s-1, Tdep of 948 K, P tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO 2 yield of 1.82 × 10-7 kg/s with SiC powder of 4.5 × 10-3 kg by RCVD was obtained.

KW - Rotary chemical vapor deposition

KW - Silica

KW - Silicon carbide

KW - Surface modification

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