Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition

Zhenhua He, Hirokazu Katsui, Rong Tu, Takashi Goto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O 4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating increased from 1 to 35 mass%. The SiO2 mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O2 gas flow, deposition temperature (Tdep), total pressure (Ptot) and precursor vaporization temperature (Tvap) on the SiO2 yield by RCVD were investigated. At O2 gas flow of 4.2 × 10-7 m3 s-1, Tdep of 948 K, P tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO 2 yield of 1.82 × 10-7 kg/s with SiC powder of 4.5 × 10-3 kg by RCVD was obtained.

Original languageEnglish
Title of host publicationAdvanced Ceramics and Novel Processing
PublisherTrans Tech Publications Ltd
Pages232-236
Number of pages5
ISBN (Print)9783038351306
DOIs
Publication statusPublished - 2014
Event5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China
Duration: 2013 Dec 92013 Dec 12

Publication series

NameKey Engineering Materials
Volume616
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

Other5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
Country/TerritoryChina
CityWuhan
Period13/12/913/12/12

Keywords

  • Rotary chemical vapor deposition
  • Silica
  • Silicon carbide
  • Surface modification

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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