TY - GEN
T1 - Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition
AU - He, Zhenhua
AU - Katsui, Hirokazu
AU - Tu, Rong
AU - Goto, Takashi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O 4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating increased from 1 to 35 mass%. The SiO2 mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O2 gas flow, deposition temperature (Tdep), total pressure (Ptot) and precursor vaporization temperature (Tvap) on the SiO2 yield by RCVD were investigated. At O2 gas flow of 4.2 × 10-7 m3 s-1, Tdep of 948 K, P tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO 2 yield of 1.82 × 10-7 kg/s with SiC powder of 4.5 × 10-3 kg by RCVD was obtained.
AB - The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O 4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating increased from 1 to 35 mass%. The SiO2 mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O2 gas flow, deposition temperature (Tdep), total pressure (Ptot) and precursor vaporization temperature (Tvap) on the SiO2 yield by RCVD were investigated. At O2 gas flow of 4.2 × 10-7 m3 s-1, Tdep of 948 K, P tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO 2 yield of 1.82 × 10-7 kg/s with SiC powder of 4.5 × 10-3 kg by RCVD was obtained.
KW - Rotary chemical vapor deposition
KW - Silica
KW - Silicon carbide
KW - Surface modification
UR - http://www.scopus.com/inward/record.url?scp=84904014965&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904014965&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.616.232
DO - 10.4028/www.scientific.net/KEM.616.232
M3 - Conference contribution
AN - SCOPUS:84904014965
SN - 9783038351306
T3 - Key Engineering Materials
SP - 232
EP - 236
BT - Advanced Ceramics and Novel Processing
PB - Trans Tech Publications Ltd
T2 - 5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
Y2 - 9 December 2013 through 12 December 2013
ER -