Surface modification of cubic GaN buffer layer grown by metalorganic vapor phase epitaxy

Akira Nagayama, Ryuji Katayama, Jun Wu, Kentaro Onabe, Hidetaka Sawada, Eliko Takuma, Hideki Ichinose, Yasuhiro Shiraki

Research output: Contribution to journalConference articlepeer-review

Abstract

Anisotropic X-Ray diffraction (XRD) and transport properties of cubic GaN grown on GaAs substrates correspond to the features of low-temperature grown GaN (LT-GaN) buffer layer. When the LT-GaN layer is grown on the surface tilted from (001) to [1-10] with annealing in arsenic ambient, the macroscopic step edges along [1-10] direction are modified by either the ambient of thermal annealing, or substrate misorientation. A parallel conduction in GaN, GaAs, and GaN/GaAs hetero-interface was observed by photoconductivity measurements. Transmission electron microscope (TEM) observation shows that self-annihilations for (-111) B stacking faults are preferentially occurred near GaAs interface when GaN film grown on the surface tilted from (001) toward [1-10] (As step edge) is annealed in arsenic ambient. TEM observation also shows that stacking faults and dislocations are preferentially generated near GaN/GaAs interface. It is suggested that anisotropic transport properties correspond to the well-like potential generated by band bending at GaN/GaAs interface. The nearly isotropic mobility of 3,000 cm2/Vsec at 77K is obtained by improving interface property.

Original languageEnglish
Pages (from-to)G3.20.1-G3.20.6
JournalMaterials Research Society Symposium - Proceedings
Volume639
Publication statusPublished - 2001 Dec 1
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: 2000 Nov 272000 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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