Surface micromachined AlN thin film 2 GHz resonator for CMOS integration

Motoaki Hara, Jan Kuypers, Takashi Abe, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k eff 2) of 5.36% at a resonant frequency of 2 GHz.

Original languageEnglish
Pages (from-to)211-216
Number of pages6
JournalSensors and Actuators, A: Physical
Volume117
Issue number2
DOIs
Publication statusPublished - 2005 Jan 14

Keywords

  • Aluminum nitride
  • CMOS compatibility
  • FBAR
  • Germanium
  • Sacrificial layer etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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