Abstract
This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k eff 2) of 5.36% at a resonant frequency of 2 GHz.
Original language | English |
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Pages (from-to) | 211-216 |
Number of pages | 6 |
Journal | Sensors and Actuators, A: Physical |
Volume | 117 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2005 Jan 14 |
Externally published | Yes |
Keywords
- Aluminum nitride
- CMOS compatibility
- FBAR
- Germanium
- Sacrificial layer etching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering