Surface micromachined AlN thin film 2 GHz resonator for CMOS integration

Motoaki Hara; Jan Kuypers; Takashi Abe; Masayoshi Esashi

doi:10.1016/j.sna.2004.06.014

Surface micromachined AlN thin film 2 GHz resonator for CMOS integration

Motoaki Hara, Jan Kuypers, Takashi Abe, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k _eff ²) of 5.36% at a resonant frequency of 2 GHz.

Original language	English
Pages (from-to)	211-216
Number of pages	6
Journal	Sensors and Actuators, A: Physical
Volume	117
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2004.06.014
Publication status	Published - 2005 Jan 14
Externally published	Yes

Keywords

Aluminum nitride
CMOS compatibility
FBAR
Germanium
Sacrificial layer etching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

Access to Document

10.1016/j.sna.2004.06.014

Cite this

@article{77046a8458ac4a72bbe7fb67c5b481ff,

title = "Surface micromachined AlN thin film 2 GHz resonator for CMOS integration",

abstract = "This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k eff 2) of 5.36% at a resonant frequency of 2 GHz.",

keywords = "Aluminum nitride, CMOS compatibility, FBAR, Germanium, Sacrificial layer etching",

author = "Motoaki Hara and Jan Kuypers and Takashi Abe and Masayoshi Esashi",

note = "Funding Information: A part of this work was performed at Venture Business Laboratory (VBL), Tohoku University, Japan. This work was supported in part by the Grant-in-Aid for Scientific Research from Ministry of Education, Scientific, Sports and Culture of Japan (13305010) and Cooperative Link of Unique Science and Technology for Economy Revitalization. Funding Information: Takashi Abe received the BS and PhD degrees in applied physics from Nagoya University, Japan, in 1992 and 1997, respectively. From 1996 to 1998, he received Japan Society for Promotion of Science (JSPS) research fellowship for young scientists. From 1998 to 2001, he served as a postdoctoral fellow at Tohoku University, Japan. Since 2001, he has been a research associate at the Department of Mechatronics and Precision Engineering, Tohoku University. His current interests are the fabrication technologies for micro/nano-devices. ",

year = "2005",

month = jan,

day = "14",

doi = "10.1016/j.sna.2004.06.014",

language = "English",

volume = "117",

pages = "211--216",

journal = "Sensors and Actuators A: Physical",

issn = "0924-4247",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Surface micromachined AlN thin film 2 GHz resonator for CMOS integration

AU - Hara, Motoaki

AU - Kuypers, Jan

AU - Abe, Takashi

AU - Esashi, Masayoshi

N1 - Funding Information: A part of this work was performed at Venture Business Laboratory (VBL), Tohoku University, Japan. This work was supported in part by the Grant-in-Aid for Scientific Research from Ministry of Education, Scientific, Sports and Culture of Japan (13305010) and Cooperative Link of Unique Science and Technology for Economy Revitalization. Funding Information: Takashi Abe received the BS and PhD degrees in applied physics from Nagoya University, Japan, in 1992 and 1997, respectively. From 1996 to 1998, he received Japan Society for Promotion of Science (JSPS) research fellowship for young scientists. From 1998 to 2001, he served as a postdoctoral fellow at Tohoku University, Japan. Since 2001, he has been a research associate at the Department of Mechatronics and Precision Engineering, Tohoku University. His current interests are the fabrication technologies for micro/nano-devices.

PY - 2005/1/14

Y1 - 2005/1/14

N2 - This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k eff 2) of 5.36% at a resonant frequency of 2 GHz.

AB - This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k eff 2) of 5.36% at a resonant frequency of 2 GHz.

KW - Aluminum nitride

KW - CMOS compatibility

KW - FBAR

KW - Germanium

KW - Sacrificial layer etching

UR - http://www.scopus.com/inward/record.url?scp=33748757389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748757389&partnerID=8YFLogxK

U2 - 10.1016/j.sna.2004.06.014

DO - 10.1016/j.sna.2004.06.014

M3 - Article

AN - SCOPUS:33748757389

VL - 117

SP - 211

EP - 216

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

SN - 0924-4247

IS - 2

ER -

Surface micromachined AlN thin film 2 GHz resonator for CMOS integration

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this