@article{77046a8458ac4a72bbe7fb67c5b481ff,
title = "Surface micromachined AlN thin film 2 GHz resonator for CMOS integration",
abstract = "This paper describes the development of the aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k eff 2) of 5.36% at a resonant frequency of 2 GHz.",
keywords = "Aluminum nitride, CMOS compatibility, FBAR, Germanium, Sacrificial layer etching",
author = "Motoaki Hara and Jan Kuypers and Takashi Abe and Masayoshi Esashi",
note = "Funding Information: A part of this work was performed at Venture Business Laboratory (VBL), Tohoku University, Japan. This work was supported in part by the Grant-in-Aid for Scientific Research from Ministry of Education, Scientific, Sports and Culture of Japan (13305010) and Cooperative Link of Unique Science and Technology for Economy Revitalization. Funding Information: Takashi Abe received the BS and PhD degrees in applied physics from Nagoya University, Japan, in 1992 and 1997, respectively. From 1996 to 1998, he received Japan Society for Promotion of Science (JSPS) research fellowship for young scientists. From 1998 to 2001, he served as a postdoctoral fellow at Tohoku University, Japan. Since 2001, he has been a research associate at the Department of Mechatronics and Precision Engineering, Tohoku University. His current interests are the fabrication technologies for micro/nano-devices. ",
year = "2005",
month = jan,
day = "14",
doi = "10.1016/j.sna.2004.06.014",
language = "English",
volume = "117",
pages = "211--216",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "2",
}