TY - GEN
T1 - Surface metal cleaning of GaN surface based on redox potential of cleaning solution
AU - Nagao, K.
AU - Nakamura, K.
AU - Teramoto, A.
AU - Shirai, Y.
AU - Imaizumi, F.
AU - Suwa, T.
AU - Sugawa, S.
AU - Ohmi, T.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - The efficacy of wet cleaning on GaN surface to remove the metal contamination, such as Fe, Ni, Cu, and Zn, has been investigated using total-reflection X-ray fluorescence analyzer (TXRF). Metal contamination on GaN surface can be reduced by the solutions with low pH and high redox potential. The start redox potential of the metal oxidation on GaN surface is larger than that of metal itself. Because metal can receive electrons from GaN surface, and then metal cannot be oxidized to ionization by solutions. The metal contamination on GaN can be reduced by the solutions with the pH less than 4.2 and the redox potential larger than 0.8 V are required. In addition, the cleaning solution required the etching ability of β- Ga2O3, because some kind of metals include in the native oxide of GaN, which is like β-Ga2O3. This method is very useful for metal cleaning and very effective for reducing chemical consumption. analysis.
AB - The efficacy of wet cleaning on GaN surface to remove the metal contamination, such as Fe, Ni, Cu, and Zn, has been investigated using total-reflection X-ray fluorescence analyzer (TXRF). Metal contamination on GaN surface can be reduced by the solutions with low pH and high redox potential. The start redox potential of the metal oxidation on GaN surface is larger than that of metal itself. Because metal can receive electrons from GaN surface, and then metal cannot be oxidized to ionization by solutions. The metal contamination on GaN can be reduced by the solutions with the pH less than 4.2 and the redox potential larger than 0.8 V are required. In addition, the cleaning solution required the etching ability of β- Ga2O3, because some kind of metals include in the native oxide of GaN, which is like β-Ga2O3. This method is very useful for metal cleaning and very effective for reducing chemical consumption. analysis.
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U2 - 10.1149/06607.0011ecst
DO - 10.1149/06607.0011ecst
M3 - Conference contribution
AN - SCOPUS:84931052595
T3 - ECS Transactions
SP - 11
EP - 21
BT - State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015
A2 - Wang, Y. L.
A2 - Chakrapani, V.
A2 - Anderson, T. J.
A2 - Zavada, J. M.
A2 - Abernathy, D. C. R.
A2 - Hite, J. K.
PB - Electrochemical Society Inc.
T2 - Symposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting
Y2 - 24 May 2015 through 28 May 2015
ER -