Surface, interface and valence band structures of ultra-thin silicon oxides

Takeo Hattori

    Research output: Contribution to journalConference articlepeer-review

    15 Citations (Scopus)

    Abstract

    The studies on surface, interface and valence band structures of ultra-thin silicon oxides at the initial stage of oxidation are reviewed. It will be shown that the surface and valence band structures of ultra-thin oxides are affected by the interface structures.

    Original languageEnglish
    Pages (from-to)156-164
    Number of pages9
    JournalApplied Surface Science
    Volume130-132
    DOIs
    Publication statusPublished - 1998
    EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
    Duration: 1997 Oct 271997 Oct 30

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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