Surface, interface and valence band structures of ultra-thin silicon oxides

Takeo Hattori

Research output: Contribution to journalConference articlepeer-review

15 Citations (Scopus)

Abstract

The studies on surface, interface and valence band structures of ultra-thin silicon oxides at the initial stage of oxidation are reviewed. It will be shown that the surface and valence band structures of ultra-thin oxides are affected by the interface structures.

Original languageEnglish
Pages (from-to)156-164
Number of pages9
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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