Abstract
Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.
| Original language | English |
|---|---|
| Pages (from-to) | L1881-L1883 |
| Journal | Japanese journal of applied physics |
| Volume | 29 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1990 Oct |
Keywords
- Silane GSM BE
- Surface hydrogen coverage
- Thermal desorption
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Hirose, F., Suemitsu, M., & Miyamoto, N. (1990). Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy. Japanese journal of applied physics, 29(10), L1881-L1883. https://doi.org/10.1143/JJAP.29.L1881