Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Fumihiko Hirose; Maki Suemitsu; Nobuo Miyamoto

doi:10.1143/JJAP.29.L1881

Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

Original language	English
Pages (from-to)	L1881-L1883
Journal	Japanese journal of applied physics
Volume	29
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.29.L1881
Publication status	Published - 1990 Oct
Externally published	Yes

Keywords

Silane GSM BE
Surface hydrogen coverage
Thermal desorption

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.29.L1881

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abstract = "Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.",

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year = "1990",

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T1 - Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

AU - Hirose, Fumihiko

AU - Suemitsu, Maki

AU - Miyamoto, Nobuo

PY - 1990/10

Y1 - 1990/10

N2 - Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

AB - Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

KW - Silane GSM BE

KW - Surface hydrogen coverage

KW - Thermal desorption

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -

Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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