Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

Original languageEnglish
Pages (from-to)L1881-L1883
JournalJapanese journal of applied physics
Volume29
Issue number10
DOIs
Publication statusPublished - 1990 Oct

Keywords

  • Silane GSM BE
  • Surface hydrogen coverage
  • Thermal desorption

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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