Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Fumihiko Hirose; Maki Suemitsu; Nobuo Miyamoto

doi:10.1143/JJAP.29.L1881

Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

Information Devices Division

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35 Citations (Scopus)

Abstract

Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

Original language	English
Pages (from-to)	L1881-L1883
Journal	Japanese journal of applied physics
Volume	29
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.29.L1881
Publication status	Published - 1990 Oct

Keywords

Silane GSM BE
Surface hydrogen coverage
Thermal desorption

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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AU - Hirose, Fumihiko

AU - Suemitsu, Maki

AU - Miyamoto, Nobuo

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Y1 - 1990/10

N2 - Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

AB - Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

KW - Silane GSM BE

KW - Surface hydrogen coverage

KW - Thermal desorption

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Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Abstract

Keywords

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