Surface energy band and electron affinity of highly phosphorous-doped epitaxial CVD diamond

S. Kono, K. Mizuochi, G. Takyo, N. I. Plusnin, T. Aoyama, T. Goto, T. Abukawa, A. Namba, Y. Nishibayashi, T. Imai

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The surface energy band diagrams and the electron affinity of hydrogen-terminated and oxygen-terminated highly phosphorous-doped single crystal diamond (111) surfaces have been studied by ultraviolet photoelectron spectroscopy, secondary electron spectroscopy, X-ray photoelectron spectroscopy and photoemission electron micro-spectroscopy. A hydrogen-terminated boron-doped diamond (001) surface was used as a, reference of surface energy band diagram. The electron affinity of the H-terminated heavily P-doped diamond was determined to be 0.2 ±0.15 eV, thus close to zero. The electron affinity of the O-terminated highly P-doped diamond was determined to be 0.0 ±0.15 eV, thus can be negative. However, the surface energy bands for the two highly P-doped samples were found to have large amounts (3 eV) of upward bending toward surface.

Original languageEnglish
Pages (from-to)33-40
Number of pages8
Journale-Journal of Surface Science and Nanotechnology
Volume5
DOIs
Publication statusPublished - 2007 Feb 3

Keywords

  • Diamond
  • Electron affinity
  • Photoemission electron micro-spectroscopy
  • Secondary electron spectroscopy
  • Surface energy band diagram
  • Ultraviolet photoelectron spectroscopy
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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