Surface-emitting laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity

T. Numai; M. Sugimoto; I. Ogura; Hideo Kosaka; K. Kasahara

doi:10.1063/1.104326

Surface-emitting laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity

T. Numai, M. Sugimoto, I. Ogura, Hideo Kosaka, K. Kasahara

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

We demonstrate the first surface-emitting laser operation in a vertical-to-surface transmission electrophotonic device with a vertical cavity. The thyristor-like current-voltage characteristics, which are required for optical and electrical switching, are achieved. Threshold current during the on state is as low as 1.2 mA. All 100 devices, which were randomly extracted from a grown wafer, emit laser light.

Original language	English
Pages (from-to)	1250-1252
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	12
DOIs	https://doi.org/10.1063/1.104326
Publication status	Published - 1991 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.104326

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abstract = "We demonstrate the first surface-emitting laser operation in a vertical-to-surface transmission electrophotonic device with a vertical cavity. The thyristor-like current-voltage characteristics, which are required for optical and electrical switching, are achieved. Threshold current during the on state is as low as 1.2 mA. All 100 devices, which were randomly extracted from a grown wafer, emit laser light.",

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AU - Kosaka, Hideo

AU - Kasahara, K.

PY - 1991/12/1

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N2 - We demonstrate the first surface-emitting laser operation in a vertical-to-surface transmission electrophotonic device with a vertical cavity. The thyristor-like current-voltage characteristics, which are required for optical and electrical switching, are achieved. Threshold current during the on state is as low as 1.2 mA. All 100 devices, which were randomly extracted from a grown wafer, emit laser light.

AB - We demonstrate the first surface-emitting laser operation in a vertical-to-surface transmission electrophotonic device with a vertical cavity. The thyristor-like current-voltage characteristics, which are required for optical and electrical switching, are achieved. Threshold current during the on state is as low as 1.2 mA. All 100 devices, which were randomly extracted from a grown wafer, emit laser light.

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Surface-emitting laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity

Abstract

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