Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

M. Sugimoto, I. Ogura, H. Saito, A. Yasuda, K. Kurihara, H. Kosaka, T. Numai, K. Kasahara

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalJournal of Crystal Growth
Volume127
Issue number1-4
DOIs
Publication statusPublished - 1993 Feb 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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