Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

M. Sugimoto; I. Ogura; H. Saito; A. Yasuda; K. Kurihara; H. Kosaka; T. Numai; K. Kasahara

doi:10.1016/0022-0248(93)90565-E

Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

M. Sugimoto, I. Ogura, H. Saito, A. Yasuda, K. Kurihara, H. Kosaka, T. Numai, K. Kasahara

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Crystal Growth
Volume	127
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(93)90565-E
Publication status	Published - 1993 Feb 2

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/0022-0248(93)90565-E

Fingerprint Dive into the research topics of 'Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this

@article{cef3d19c8bfc4f4784633f1f6cea7cca,

title = "Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy",

abstract = "We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.",

author = "M. Sugimoto and I. Ogura and H. Saito and A. Yasuda and K. Kurihara and H. Kosaka and T. Numai and K. Kasahara",

year = "1993",

month = feb,

day = "2",

doi = "10.1016/0022-0248(93)90565-E",

language = "English",

volume = "127",

pages = "1--4",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

AU - Sugimoto, M.

AU - Ogura, I.

AU - Saito, H.

AU - Yasuda, A.

AU - Kurihara, K.

AU - Kosaka, H.

AU - Numai, T.

AU - Kasahara, K.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

AB - We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

UR - http://www.scopus.com/inward/record.url?scp=0027904752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027904752&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(93)90565-E

DO - 10.1016/0022-0248(93)90565-E

M3 - Article

AN - SCOPUS:0027904752

VL - 127

SP - 1

EP - 4

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -