Abstract
We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.
Original language | English |
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Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 127 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1993 Feb 2 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry