Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

M. Sugimoto; I. Ogura; H. Saito; A. Yasuda; K. Kurihara; H. Kosaka; T. Numai; K. Kasahara

doi:10.1016/0022-0248(93)90565-E

Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

M. Sugimoto, I. Ogura, H. Saito, A. Yasuda, K. Kurihara, H. Kosaka, T. Numai, K. Kasahara

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Crystal Growth
Volume	127
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(93)90565-E
Publication status	Published - 1993 Feb 2

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(93)90565-E

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title = "Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy",

abstract = "We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.",

author = "M. Sugimoto and I. Ogura and H. Saito and A. Yasuda and K. Kurihara and H. Kosaka and T. Numai and K. Kasahara",

year = "1993",

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T1 - Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

AU - Sugimoto, M.

AU - Ogura, I.

AU - Saito, H.

AU - Yasuda, A.

AU - Kurihara, K.

AU - Kosaka, H.

AU - Numai, T.

AU - Kasahara, K.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

AB - We realized extremely high absolute thickness controllability around ±0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

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DO - 10.1016/0022-0248(93)90565-E

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JF - Journal of Crystal Growth

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ER -

Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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