Surface electronic structure of single-domain Si( 001) 2 × 2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation

H. W. Yeom; T. Abukawa; Y. Takakuwa; M. Nakamura; M. Kimura; A. Kakizaki; S. Kono

doi:10.1016/0039-6028(94)90171-6

Surface electronic structure of single-domain Si( 001) 2 × 2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation

H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, S. Kono

Research output: Contribution to journal › Letter › peer-review

19 Citations (Scopus)

Abstract

The electronic structure of a single-domain Si(001)2 × 2-Al surface has been studied by angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Through detailed ARPES measurements along various symmetry axes of the surface Brillouin zone, the existence and dispersions of five surface states are identified, one at binding energies a little less than 1 eV and the others between 1 and 2 eV. The origin of the surface states are discussed in terms of the Al-dimer structures on Si(001).

Original language	English
Pages (from-to)	L177-L182
Journal	Surface Science
Volume	321
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(94)90171-6
Publication status	Published - 1994 Dec 20

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)90171-6

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title = "Surface electronic structure of single-domain Si( 001) 2 × 2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation",

abstract = "The electronic structure of a single-domain Si(001)2 × 2-Al surface has been studied by angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Through detailed ARPES measurements along various symmetry axes of the surface Brillouin zone, the existence and dispersions of five surface states are identified, one at binding energies a little less than 1 eV and the others between 1 and 2 eV. The origin of the surface states are discussed in terms of the Al-dimer structures on Si(001).",

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T1 - Surface electronic structure of single-domain Si( 001) 2 × 2-Al

T2 - an angle-resolved photoelectron spectroscopy study using synchrotron radiation

AU - Yeom, H. W.

AU - Abukawa, T.

AU - Takakuwa, Y.

AU - Nakamura, M.

AU - Kimura, M.

AU - Kakizaki, A.

AU - Kono, S.

PY - 1994/12/20

Y1 - 1994/12/20

N2 - The electronic structure of a single-domain Si(001)2 × 2-Al surface has been studied by angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Through detailed ARPES measurements along various symmetry axes of the surface Brillouin zone, the existence and dispersions of five surface states are identified, one at binding energies a little less than 1 eV and the others between 1 and 2 eV. The origin of the surface states are discussed in terms of the Al-dimer structures on Si(001).

AB - The electronic structure of a single-domain Si(001)2 × 2-Al surface has been studied by angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Through detailed ARPES measurements along various symmetry axes of the surface Brillouin zone, the existence and dispersions of five surface states are identified, one at binding energies a little less than 1 eV and the others between 1 and 2 eV. The origin of the surface states are discussed in terms of the Al-dimer structures on Si(001).

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UR - http://www.scopus.com/inward/citedby.url?scp=0028728751&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(94)90171-6

DO - 10.1016/0039-6028(94)90171-6

M3 - Letter

AN - SCOPUS:0028728751

VL - 321

SP - L177-L182

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 3

ER -

Surface electronic structure of single-domain Si( 001) 2 × 2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation

Abstract

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