Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study

Tadashi Abukawa, M. Sasaki, F. Hisamatsu, T. Goto, T. Kinoshita, A. Kakizaki, S. Kono

Research output: Contribution to journalArticlepeer-review

143 Citations (Scopus)

Abstract

The electronic structure of a Si(111)4 × 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 × 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 × 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 × 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 × 1-In surface.

Original languageEnglish
Pages (from-to)33-44
Number of pages12
JournalSurface Science
Volume325
Issue number1-2
DOIs
Publication statusPublished - 1995 Feb 20

Keywords

  • Angle-resolved photoemission
  • Indium
  • Metal-semiconductor non-magnetic thin film structures
  • Metallic films
  • Silicon
  • Surface electronic phenomena
  • Vicinal single-crystal surfaces

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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