As 3d and Ga 3d photoemission spectra were probed in order to investigate the surface states in transition-metal doped GaAs (001) as spintronics materials. The growth mechanism and chemical bonding states at the surface of III-V-based diluted magnetic semiconductors, Ga1-x Mnx As and Ga1-x Crx As, have been investigated by angular-dependent in situ photoemission spectroscopy. On low-temperature GaAs grown at 200 °C, the difference in core-level photoemission spectra of Ga1-x Mnx As and Ga1-x Crx As is well related to that in the reflection high-energy electron-diffraction patterns, suggesting that not only As ions but also Ga ions are modulated in Ga1-x Mnx As.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)