Surface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy

K. Kanai, J. Okabayashi, S. Toyoda, M. Oshima, K. Ono

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

As 3d and Ga 3d photoemission spectra were probed in order to investigate the surface states in transition-metal doped GaAs (001) as spintronics materials. The growth mechanism and chemical bonding states at the surface of III-V-based diluted magnetic semiconductors, Ga1-x Mnx As and Ga1-x Crx As, have been investigated by angular-dependent in situ photoemission spectroscopy. On low-temperature GaAs grown at 200 °C, the difference in core-level photoemission spectra of Ga1-x Mnx As and Ga1-x Crx As is well related to that in the reflection high-energy electron-diffraction patterns, suggesting that not only As ions but also Ga ions are modulated in Ga1-x Mnx As.

Original languageEnglish
Article number192506
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
Publication statusPublished - 2006 May 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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