Surface electromigration of metals on Si(001): In/Si(001)

S. Kono; T. Goto; Y. Ogura; T. Abukawa

doi:10.1016/S0039-6028(98)00825-5

Surface electromigration of metals on Si(001): In/Si(001)

S. Kono, T. Goto, Y. Ogura, T. Abukawa

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The possibility of surface electromigration (SE) of metals of In, Ga, Sb and Ag on a very flat Si(001)2×1 substrate (single domain 2×1) was examined by SEM, μ-RHEED and μ-AES under UHV conditions. It was found that Ga, Sb and Ag show no SE on Si(001) surface even at DC annealing temperatures for the desorption of these metals. For In on Si(001), a very fast SE (~8000μm/min) towards the cathode side was found that suddenly sets in at ~450°C DC annealing, which was related to a surface phase transition. μ-RHEED and μ-AES observation showed that the SE is related to an ordered 4×3-In phase together with two-dimensional In gas phase over the 4×3-In phase and an In-disordered phase at the front end of SE. Single domain 4×3-In phases were found to occur under sequences of In deposition and DC annealing which involve the In SE on Si(001).

Original language	English
Pages (from-to)	200-212
Number of pages	13
Journal	Surface Science
Volume	420
Issue number	2-3
DOIs	https://doi.org/10.1016/S0039-6028(98)00825-5
Publication status	Published - 1999 Jan 20

Keywords

Adatoms
Antimony
Diffusion and migration
Gallium
Indium
Low index single crystal surfaces
Silicon
Silver

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Surface electromigration of metals on Si(001): In/Si(001)",

abstract = "The possibility of surface electromigration (SE) of metals of In, Ga, Sb and Ag on a very flat Si(001)2×1 substrate (single domain 2×1) was examined by SEM, μ-RHEED and μ-AES under UHV conditions. It was found that Ga, Sb and Ag show no SE on Si(001) surface even at DC annealing temperatures for the desorption of these metals. For In on Si(001), a very fast SE (~8000μm/min) towards the cathode side was found that suddenly sets in at ~450°C DC annealing, which was related to a surface phase transition. μ-RHEED and μ-AES observation showed that the SE is related to an ordered 4×3-In phase together with two-dimensional In gas phase over the 4×3-In phase and an In-disordered phase at the front end of SE. Single domain 4×3-In phases were found to occur under sequences of In deposition and DC annealing which involve the In SE on Si(001).",

keywords = "Adatoms, Antimony, Diffusion and migration, Gallium, Indium, Low index single crystal surfaces, Silicon, Silver",

author = "S. Kono and T. Goto and Y. Ogura and T. Abukawa",

note = "Funding Information: The authors are grateful to Dr. K. Sakamoto and Dr. T. Sakamoto of Electrotechnical Laboratory for providing them with the Si wafer used. Part of this work is supported by a Grant-in-Aid for Creative Basic Research (09NP1201). ",

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doi = "10.1016/S0039-6028(98)00825-5",

language = "English",

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pages = "200--212",

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T1 - Surface electromigration of metals on Si(001)

T2 - In/Si(001)

AU - Kono, S.

AU - Goto, T.

AU - Ogura, Y.

AU - Abukawa, T.

N1 - Funding Information: The authors are grateful to Dr. K. Sakamoto and Dr. T. Sakamoto of Electrotechnical Laboratory for providing them with the Si wafer used. Part of this work is supported by a Grant-in-Aid for Creative Basic Research (09NP1201).

PY - 1999/1/20

Y1 - 1999/1/20

N2 - The possibility of surface electromigration (SE) of metals of In, Ga, Sb and Ag on a very flat Si(001)2×1 substrate (single domain 2×1) was examined by SEM, μ-RHEED and μ-AES under UHV conditions. It was found that Ga, Sb and Ag show no SE on Si(001) surface even at DC annealing temperatures for the desorption of these metals. For In on Si(001), a very fast SE (~8000μm/min) towards the cathode side was found that suddenly sets in at ~450°C DC annealing, which was related to a surface phase transition. μ-RHEED and μ-AES observation showed that the SE is related to an ordered 4×3-In phase together with two-dimensional In gas phase over the 4×3-In phase and an In-disordered phase at the front end of SE. Single domain 4×3-In phases were found to occur under sequences of In deposition and DC annealing which involve the In SE on Si(001).

AB - The possibility of surface electromigration (SE) of metals of In, Ga, Sb and Ag on a very flat Si(001)2×1 substrate (single domain 2×1) was examined by SEM, μ-RHEED and μ-AES under UHV conditions. It was found that Ga, Sb and Ag show no SE on Si(001) surface even at DC annealing temperatures for the desorption of these metals. For In on Si(001), a very fast SE (~8000μm/min) towards the cathode side was found that suddenly sets in at ~450°C DC annealing, which was related to a surface phase transition. μ-RHEED and μ-AES observation showed that the SE is related to an ordered 4×3-In phase together with two-dimensional In gas phase over the 4×3-In phase and an In-disordered phase at the front end of SE. Single domain 4×3-In phases were found to occur under sequences of In deposition and DC annealing which involve the In SE on Si(001).

KW - Adatoms

KW - Antimony

KW - Diffusion and migration

KW - Gallium

KW - Indium

KW - Low index single crystal surfaces

KW - Silicon

KW - Silver

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JF - Surface Science

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ER -

Surface electromigration of metals on Si(001): In/Si(001)

Abstract

Keywords

ASJC Scopus subject areas

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