Surface electrical breakdown and leakage current on semi-insulating InP

T. Kitagawa, H. Hasegawa, H. Ohno

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO2 or Si3N4. The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.

Original languageEnglish
Pages (from-to)299-301
Number of pages3
JournalElectronics Letters
Volume21
Issue number7
DOIs
Publication statusPublished - 1985 Jan 1
Externally publishedYes

Keywords

  • Indium phosphide
  • Semi-insulating substrates
  • Semiconductor devices and materials
  • Surface phenomena

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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