Surface electrical breakdown and leakage current on semi-insulating InP

T. Kitagawa; H. Hasegawa; H. Ohno

doi:10.1049/el:19850214

Surface electrical breakdown and leakage current on semi-insulating InP

T. Kitagawa, H. Hasegawa, H. Ohno

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO₂ or Si₃N₄. The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.

Original language	English
Pages (from-to)	299-301
Number of pages	3
Journal	Electronics Letters
Volume	21
Issue number	7
DOIs	https://doi.org/10.1049/el:19850214
Publication status	Published - 1985 Jan 1
Externally published	Yes

Keywords

Indium phosphide
Semi-insulating substrates
Semiconductor devices and materials
Surface phenomena

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19850214

Cite this

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abstract = "Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO2 or Si3N4. The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.",

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author = "T. Kitagawa and H. Hasegawa and H. Ohno",

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AU - Kitagawa, T.

AU - Hasegawa, H.

AU - Ohno, H.

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Y1 - 1985/1/1

N2 - Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO2 or Si3N4. The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.

AB - Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO2 or Si3N4. The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.

KW - Indium phosphide

KW - Semi-insulating substrates

KW - Semiconductor devices and materials

KW - Surface phenomena

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Surface electrical breakdown and leakage current on semi-insulating InP

Abstract

Keywords

ASJC Scopus subject areas

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