Surface dynamics on a high-temperature Si surface under a high-pressure reactive gas atmosphere studied by time-resolved UPS

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Abstract

The surface dynamics on a high-temperature Si surface under a reactive gas atmosphere have been investigated by time-resolved ultraviolet photoelectron spectroscopy (UPS). In this paper, after describing the key points in the surface dynamics study and the details of the time-resolved UPS method, we review the surface dynamics of gas source molecular beam epitaxy (GSMBE) with Si2H6, etching with Cl and oxidation with O2 on the Si(001) surface. The oscillatory behavior of the surface state photoelectron intensity was found to appear during GSMBE, making it possible to measure in real time the Si growth rate. Using Si(001) wafers with two different miscut angles of 0.05° and 4.00°, it was confirmed that the Si adatoms (ad-Si) released from step edges play an important role in etching [ad-Si+Cl→SiCl (desorption species)], thermal oxidation [ad-Si+O2→SiO2 (two-dimensional island growth)], and decomposition [SiO2 + ad-Si-→2SiO (desorption species)].

Original languageEnglish
Pages (from-to)211-221
Number of pages11
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume101-103
DOIs
Publication statusPublished - 1999

Keywords

  • Etching
  • Gas source molecular beam epitaxy
  • In situ observation
  • Oxidation
  • Si adatom
  • Si gas-phase process
  • Surface dynamics
  • Time-resolved ultraviolet photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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